FETs deliver industry’s highest-performance upgrade path

29th May 2018

UnitedSiC

Enaie Azambuja

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Datasheet

Designers of Power Factor Correction stages (PFCs), Active Frontend Rectifiers, LLC converters and Phase Shift Full Bridge converters can now upgrade existing system performance by using the UJ3C1200 series of SiC JFET cascodes from UnitedSiC. With a voltage rating of 1200V and ON-resistances of 80 and 40 milliohms, these devices offer a ‘drop-in’ replacement solution for many existing IGBT, Si-MOSFET and SiC-MOSFET parts, with no change to gate drive circuitry.

This simplifies design upgrades and provides an alternative-purchasing source for existing parts.

Applications include Power Factor Correction stages, Active frontend rectifiers, LLC converters and Phase Shift Full Bridge Converters where improvements to efficiency and/or power density are required. End-uses include on-board EV chargers, battery charging for forklifts, PV inverters, welding and more.

Based on UnitedSiC’s Gen 3 SiC transistor technology, the UJ3C1200 series integrates a SiC JFET with a custom-designed Si-MOSFET to produce a suitable combination of normally-OFF operation, high performance body diode and easy gate drive of the MOSFET with the efficiency, speed and high temperature rating of the SiC JFET.

As a result, existing systems can expect a performance increase with lower conduction and switching losses, enhanced thermal properties and integrated gate ESD protection.

In new designs, the UnitedSiC UJ3C1200 series delivers increased switching frequencies to gain substantial system benefits in both efficiency and reduction in size and cost of passive components, such as magnetics and capacitors.

UnitedSiC will show the 1200V FETs at PCIM 2018 on the ECOMAL Europe booth, 7-406.