EasyDUAL CoolSiC MOSFET for increased power density
Infineon Technologies has upgraded the EasyDUAL CoolSiC MOSFET modules with a new aluminum nitride (AIN) ceramic. The devices come in half-bridge configuration with an on-state resistance (R DS(on)) of 11mΩ in an EasyDUAL 1B package and 6mΩ in an EasyDUAL 2B package.
With high-performance ceramic, the 1,200V devices are suitable for high-power density applications including solar systems, uninterruptible power supplies, auxiliary inverters, energy storage systems and electric vehicle chargers.
The EasyDUAL modules FF11MR12W1M1_B70 and FF6MR12W2M1_B70 are equipped with the latest CoolSiC MOSFET technology that features superior gate-oxide reliability. With the improved thermal conductivity of the DCB material, the thermal resistance to the heat sink (R thJH) can be lowered by up to 40%.
Combined with the CoolSiC Easy modules, the new AIN ceramic enables an increase of the output power or reduces the junction temperatures. This can lead to an improved lifespan of the system.
The EasyDUAL CoolSiC MOSFET modules FF11MR12W1M1_B70 and FF6MR12W2M1_B70 are now available.
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