Compact N-channel power MOSFETs with 40 percent FOM index improvement

The NP75N04YUK is the first of a total of 32 new power MOSFETs with Renesas’ ANL2 fabrication process. Thanks to this newly developed fabrication process, the Figure of Merit (FOM) performance index - equivalent to the device on-resistance multiplied by the gate charge - is approximately 40 percent lower than that of N-channel power MOSFETs manufactured using the conventional UMOS4 process.

The NP75N04YUK has a breakdown voltage of 40 V or 55 V and can handle rated currents from 35 A to 180 A. Depending on the field of application and type - available in TO-263 7-pin, TO-263, TO-252, HSON-8, TO-220 or TO-262 package - the AEC-Q101 qualified N-channel power MOSFETs are ideally suited for a wide range of high-performance control systems for automotive applications.