Compact gate drivers feature increased creepage distance

9th May 2016

Nat Bowers

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Infineon has added a number of wide body package options to its EiceDRIVER Compact galvanically isolated gate driver IC family. The 7.62mm (0.3") 1EDI Compact devices are supplied in a DSO-8 package offering increased creepage distances and improved thermal behaviour.

Featuring a creepage distance of 8mm, the devices have an input-to-output isolation voltage of 1,200V. They are designed to drive high-voltage power MOSFETs and IGBTs in applications including general-purpose and PV inverters, industrial drives, charging stations for EVs, welding equipment and commercial and agricultural vehicles.

An optimised pin-out simplifies PCB design for low-impedance power supplies. As with other members of Infineon’s EiceDRIVER family, 1EDI Compact drivers are based on the company’s coreless transformer technology. The latest driver ICs enable output currents of up to 6A.

The ICs deliver drive currents on separate sink and source output pins of 0.5A (1EDI05I12AH), 2A (1EDI20I12AH), 4A (1EDI40I12AH) and 6A (1EDI60I12AH), respectively. Typical propagation delay for these devices is 300ns. For higher speed applications, the 1EDI20H12AH and 1EDI60H12AH have a reduced propagation delay of just 120ns, an excellent fit for today’s up and coming SiC-MOSFET based applications. Three further variants (1EDI10I12MH, 1EDI20I12MH and 1EDI30I12MH) feature an integrated Miller clamp and provide respective output currents of 1, 2 and 3A.

Volume production of the 1EDI Compact gate driver ICs is planned for June 2016. Engineering samples and evaluation boards are available now.