1200V CoolSiC Trench MOSFET in TO263-7 package

The automotive-graded silicon carbide (SiC) MOSFET generation offers high power density and efficiency, enables bi-directional charging and significantly reduces system cost in on-board charging (OBC) and DC-DC applications.

The 1200V CoolSiC family member offers best-in-class switching performance through 25% lower switching losses compared to the first generation. This improvement in switching behaviour enables high-frequency operation, leading to smaller system sizes and increased power density. With a Gate-source threshold voltage (V GS(th)) greater than 4V and a very low Crss/Ciss ratio, reliable turn-off at V GS = 0V is achieved without the risk of parasitic turn-ons. This allows for unipolar driving, resulting in reduced system cost and complexity. In addition, the new generation features a low on-resistance (R DS(on)), reducing conductive losses over the whole temperature range of -55°C to 175°C.

The advanced diffusion soldering chip mount technology (.XT technology) significantly improves the package's thermal capabilities, lowering the SiC MOSFET junction temperature by 25% compared to the first generation.

Moreover, the MOSFET has a creepage distance of 5.89mm, meeting 800V system requirements and reducing coating effort. Infineon is offering a range of R DS(on) options to cater to diverse application demands, including the only 9mΩ type in the TO263-7 package currently on the market.

KOSTAL uses CoolSiC MOSFET in their OBC platform

KOSTAL Automobil Elektrik has designed-in Infineon’s latest CoolSiC MOSFET in their next-generation OBC platform for Chinese OEMs. KOSTAL is a supplier for automotive charger systems. With their standard platform approach, safe, reliable, and efficient products are worldwide delivered for various OEM requirements and global regulations.

“Decarbonisation is the major challenge of this decade and thus a great motivation to shape car electrification with our customers. Therefore, we are very proud about the partnership with KOSTAL,” said Robert Hermann, Vice President for Automotive High Voltage Chips and Discretes at Infineon. “This project highlights the strong position of our standard product portfolio within the on-board charger market enabled by cutting-edge SiC technology.”

“As key component for our future generation OBC platform, Infineon’s new 1200V CoolSiC Trench MOSFET features high voltage rating and qualified robustness. These benefits help us to create a compatible design to manage our state-of-art technical solutions, cost optimisation and massive market delivery,” said Shen Jianyu, Vice President, Technical Executive Manager at KOSTAL ASIA.