Avago Technologies Completes Next Generation of Low Noise Amplifiers for Cellular and LTE Base Stations with MGA-635P8

The wireless infrastructure industry must provide optimum coverage with the best signal quality in a crowded spectrum. Receiver sensitivity is the most critical requirement in a BTS receiver’s design. LNA selection, in particular the first-stage LNA, greatly affects the BTS receiver’s performance. Low noise figure is a key design goal. The MGA-635P8 has a best-in-class noise figure (NF) of 0.56 dB, 0.75 dB maximum, at 2500 MHz.

Another key design factor is linearity, which affects the receiver’s ability to distinguish between closely spaced wanted and spurious signals. Output third-order intercept, OIP3, is used to specify linearity. At 2500 MHz and operating from 5 V with a 56 mA bias current, Avago’s MGA-635P8 delivers a superior OIP3 performance of 35.9 dBm.

Adjustability and Common Pinout for Design Optimization and Flexibility

With built-in active bias circuitry, the MGA-635P8 operating current is adjustable. This allows designers to make tradeoffs between operating current and output linearity while maintaining an optimum noise figure. BTS designers can meet various design needs and regional requirements with the same Avago LNA.

Since more communication channels must now fit onto a transmit/receive card, PCB real estate has become a key design challenge for BTS engineers. The MGA-635P8 is housed in a quad flat no-lead plastic (QFN) package with a small 2 mm by 2 mm footprint and slim 0.75 mm thickness.

Key MGA-635P8 Features (Typical at 2.5 GHz, 5 V and 56 mA bias)

• 2300 MHz to 4000 MHz operation
• Low NF: 0.59 dB @ 2500 MHz
• Excellent linearity: 35.9 dBm OIP3
• High and Consistent gain: 18 dB
• High P1 dB: 22 dBm
• Single 5 V power supply and 56 mA bias for low power operation
• Common footprint, pinout, package and matching network for the MGA-633P8, MGA-643P8 and MGA-653P8 devices

– Simplifies PCB design and engineering

• Proprietary process for low noise and excellent linearity: 0.25-micron, GaAs Enhancement-mode pHEMT