Optoelectronics

WDM interconnect 28Gb/s silicon platform demonstrated at IPR 2014

25th July 2014
Staff Reporter
0

Improved performance of various key building blocks for WDM optical interconnects in silicon was successfully demonstrated by imec at IPR 2014. The demonstration involved, at wafer-scale, a ring-based WDM filter with an improved thermo-optic tuning efficiency of better than 1nm/mW per channel. The demonstration also included a thermally tunable 28Gb/s ring modulator with an efficiency of 260pm/mW, and a high-speed germanium photodetector achieving an average responsitivity of 0.85A/W, and opto-electrical bandwidth of 50GHz with dark currents at –1.0V below 50nA.

All of the devices are integrated on imec’s iSiPP25G platform and extend imec’s Si photonics portfolio. The portfolio also includes low-loss (<2.5dB/cm) strip waveguides, highly efficient grating couplers (2.5dB insertion loss), and 25Gb/s Mach-Zehnder modulators amongst others.

Imec offers the platform for silicon photonics via ePIXfab (supported by Ghent University), Europractice IC service and MOSIS. The next passive run is now open for registration (deadline September 15th) with first wafers out in January 2015. Imec’s third active ISIPP25G run is now open for registration (deadline November 10th) with first wafers out in June 2015.

“Imec’s Silicon Photonics platform provides 28Gb/s performance for integrated photonics circuits for telecom and datacom industries. Companies can benefit from our silicon photonics capability through established standard cells, or explore the functionality of their own designs in Multi-Project Wafer (MPW) runs,” stated Philippe Absil, program director at imec. “Through our MPW offer, fabless R&D teams can access a cost-efficient silicon photonics solution, with state-of-the-art performance, design flexibility and superior CD and thickness control”.

The demonstrations took place at the Integrated Photonics Research, Silicon and Nanophotonics Conference 2014, between July 13 and July 16 in San Diego.

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