Innoscience bidirectional VGaN HEMTs employed by OnePlus

Innoscience’s INN040W048A GaN-on-Silicon e-mode HEMT features a bi-directional blocking capability and low On Resistance. With no body diodes and low conduction resistance, this chip is being used by OPPO, RealMe, and now OnePlus to replace two silicon MOSFETs that are conventionally required by a phone’s protection circuitry. This not only saves up to 64% space in the phone, it also reduces the heat generated during charging – by 85% in peak power heating – resulting in faster charging.

Yi Sun, General Manager of Innoscience America and Senior VP at Innoscience, comments: “Teardown site, ChargerLAB says ‘the OnePlus 11R is a testament to the potential of GaN technology and offers a glimpse into the future of mobile devices. Over the past few years, we have seen consumer device makers employ GaN ICs to reduce the size and increase the efficiency of new, sleek USB-PD chargers. This demonstrates that OPPO, RealMe, OnePlus, and similar companies, are realising that GaN can be extremely beneficial inside the handset as well.”

Felix Wang, VP of Product Development, adds: “As well as the blocking circuitry, we can deliver a comprehensive GaN platform for mobile devices, including the DC/DC charge pump, battery management system, Buck topology, 3D ToF, and more. We are working with leading worldwide phone manufacturers as they understand the benefits that InnoGaN’s technology can bring into their devices.”