GaN-on-SiC wafer specialist sees 2019 growth

“2019 was an outstanding year for SweGaN with a doubling of commercial orders and collaboration in multiple prestigious EU projects,” said Olof Kordina, CEO, SweGaN. The technology was highlighted in the largest Swedish technical magazine Ny Teknik. A featured article in Applied Physics Letters, Volume 115, Issue 22, ‘Transmorphic Epitaxial Growth of AlN Nucleation Layers on SiC Substrates for High-Breakdown Thin GaN Transistors’, showed the material’s very high electrical breakdown voltage making it ideal for power devices.

In 2020, we will continue focusing on ground-breaking product development, building our manufacturing capabilities and further energising our global network of customers and strategic partners.

In addition, SweGaN has further strengthened its board of directors with the introduction of new members Agneta Franksson and Richard Weil at its annual meeting, February 12th.

“SweGaN is highly pleased to gain the additional expertise of our newest board members, confirms Kordina. Agneta and Richard bring a wealth of specialised experience, valuable assets to the board of directors in further guiding SweGaN in its long-term strategy and growth.”