SweGaN has announced the closing of a substantial equity round from financial and strategic investors.

SweGaN has reported orders for its benchmark QuanFINE epiwafers worth 17 MSEK in the first half of 2024, including three large frame agreements from undisclosed major telecom and defence market players.

SweGaN AB, a European semiconductor manufacturer specialising in the development and production of high-performance Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers, announced it has entered into a strategic partnership with South Korea-based RFHIC Corporation.

SweGaN AB, a European semiconductor manufacturer that develops and produces custom-made Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers, announces the introduction of CFO Stefan Axelsson, and R&D Manager Anders Lundskog.

SweGaN welcomes a Swedish telecom executive, Sven-Christer Nilsson, to join the company as a Senior Advisor.

SweGaN has announced it is building a new headquarters including a high-capacity semiconductor production facility in Linköping, Sweden.

SweGaN AB, manufacturer of custom-made Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers for an extensive range of devices used in telecom, satellite, defence, and power electronics, has completed a Series A financing round totalling 125 MSEK (12M Euro).

SweGaN has announced it is partnering with Ferdinand-Braun-Institut (FBH) and University of Bristol in a European Space Agency project 'Kassiopeia' that includes a focus on SweGaN’s QuanFINE GaN-on-SiC epitaxial materials to help boost the device efficiency for Ka band applications.

SweGaN AB has announced that it is partnering with Ferdinand-Braun-Institut (FBH) and the University of Bristol in a European Space Agency project ‘Kassiopeia’ that includes a focus on SweGaN’s QuanFINE GaN-on-SiC epitaxial materials to help boost the device efficiency for Ka band applications.

SweGaN AB, manufacturer of custom-made GaN-on-SiC epitaxial wafers for components and devices for telecom, satellite, defense and power electronics, has announced its BoD Chairman Mats Andersson has stepped down, passing the SweGaN torch to Vice Chairman, Agneta Franksson.

SweGaN AB, manufacturer of GaN-on-SiC epitaxial wafers based on epitaxial growth technologies for telecom, satellite, defense and power applications, has announced they have relocated their headquarters to a new facility in Linköping, Sweden, which combines a lab housing several production tools and an administration and office area.

SweGaN AB, a manufacturer of custom-made GaN-on-SiC epitaxial wafers based on an epitaxial growth technology for RF and power components and devices, has announced strong results for 2019 with 300% year-on-year growth from 2018.