Power modules combine IGBT5 & .XT interconnection technology

The IGBT5 allows for higher power density with reduced static and dynamic losses, while the .XT interconnection technology extends lifetime by increased thermal and power cycling capabilities. The modules are, therefore, particularly suitable for of high power inverters in applications such as wind, solar and industrial drives.

The PrimePACK modules include the latest IGBT5 chip from Infineon with a 25K higher maximum operation junction temperature, allowing for a maximum junction temperature of T vjop=175 °C. Compared to the previous generation, the IGBT5 chips show an improved soft switching behaviour along with reduced total losses. This enables a higher power density in 1200V and 1700V applications. As a consequence, within the same PrimePACK footprint the output current of the application can be increased by 25%.

The module has been enhanced with Infineon’s .XT interconnection technology to fulfill today’s and tomorrow’s lifetime requirements. This has been realised by sintering of IGBT chips and diodes along with improved system soldering and copper bonds instead of aluminium bonds. Applications can now benefit from increased system availability due to an extended lifetime of PrimePACK modules by the factor ten.

By integrating IGBT5 and .XT technology into PrimePACK, Infineon provides a new degree of freedom to system designers. Using the PrimePACK with IGBT5, the output power of the application can either be increased by 25%, or a tenfold increase of lifetime for the same output current can be realised. For the same output power the cooling efforts can be significantly reduced, while on the other hand higher system overload conditions are enabled. Various tradeoffs between output power and lifetime are feasible. With this new design flexibility, the best set-up for the majority of system applications can be realised.

The PrimePACK 3+ housing for the high current modules provides an additional AC terminal and bus bar, which leads to increased current carrying capabilities. In addition, a low-inductance connectivity to the collector of the bottom IGBT is realised by an additional control terminal.