Transphorm present GaN industry sessions at AEPC

5th March 2014

Nat Bowers

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Firmly establishing the company at the forefront of GaN (Gallium Nitride) technology, Transphorm has announced that it will present two “Industry Sessions” presentations at APEC 2014. At last year’s APEC show, Transphorm introduced what they believe to be the first and only 600V JEDEC-qualified GaN-on-Silicon HEMTs (high electron mobility transistors).

At the upcoming APEC 2014 conference, experts from Transphorm will present an update on growing industry acceptance of GaN, along with proof of the significant advantages of using this technology for power conversion designs in actual implementations.

Both Transphorm presentations will take place on Thursday, March 20, 2014. The first session (IS2-4-2), authored by Drs. Kurt Smith and YiFeng Wu of Transphorm, is titled: “Moving Beyond Qualification to Verify the Long-Term Reliability of GaN Devices,” and will take place during the Industry Sessions on “Wide Band Gap Devices” from 8:30-11:30 a.m. The second session (IS2-5-3), by Transphorm’s YiFeng Wu, will be: “A GaN Speaker, What He Needs.” This presentation is scheduled during the 2:00-5:30 p.m. Industry Sessions on “How are Magnetics Catching up to SiC & GaN.”

APEC’s highly popular Industry Sessions presentations are solicited from leaders in the power electronics industry and are geared to address topics of current interest - particularly the impact of emerging technologies on today’s designs. Unlike APEC’s General Session papers, Industry Sessions presentations are not published in the Conference Proceedings and will only be made available to session attendees.