LEDs grown on semi-polar GaN wafers

4th January 2011

ES Admin

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Ostendo Technologies, Inc. (Ostendo) and Technologies and Devices International, Inc. (TDI), part of the Oxford Instruments Group, are pleased to announce that LED structures grown on their semi-polar (11-22) GaN wafers have resulted in more than 2.5x the emission intensity of the c-plane GaN based LED structures.

Ostendo & TDI had entered into an Information Exchange Agreement with Palo Alto Research Center (PARC) in 2008, pursuant to which they agreed to make semi-polar GaN wafers available for PARC to grow LED and Laser Diode structures on the supplied wafers, and independently validate and report the achieved results. As part of their validation, PARC has grown MQW LED structure on our semi-polar GaN side-by-side with a reference c-plane LED structure in the same MOCVD run. Some of the key results verify the following:

* The LED structure grown on our semi-polar GaN achieved more than 2.5x more emission intensity than the reference LED structure grown on c-plane GaN
* Our semi-polar GaN allowed for higher indium (In) incorporation resulting in longer peak wavelength of ~25 nm for the structure grown
* Further findings of this collaboration has recently been published as a feature article titled “Semi-polar nitride surfaces and heterostructures” in the October 2010 issue of the prestigious Physica Status Solidi Magazine.

“This is an excellent validation of our work in the semi-polar GaN area for the last two and a half years as it verified the main advantage of our semi-polar GaN and should help encourage LED makers to start considering it for future LED brightness improvements” added Dr. Hussein S. El Ghoroury, CEO of Ostendo. “We are delighted that the production grade, semi-polar GaN wafers produced at TDI, which are as a result of research funded by Ostendo, has generated such encouraging results, comments Frazer Anderson, Business Development Director at Oxford Instruments, As a business, Oxford Instruments aims to use innovation to turn smart science into world class products, and this joint initiative with Ostendo and PARC meets our customers' needs through the advanced technology our companies have available.”

Earlier this year Ostendo and TDI announced the availability of semi-polar (11-22) GaN layer on sapphire substrate wafers using Ostendo’s proprietary design and TDI’s proprietary Hydride Vapor Phase Epitaxy (HVPE) technology. This joint development now provides the opportunity to leading High Brightness Light Emitting Diode (HBLED) and Laser Diode developers to increase optical efficiency significantly compared with structures grown on c-plane GaN substrates.