Analysis
EdXact ‘s Parasitics Analysis and Netlist Reduction Technology Endorsed in a Testimonial on Layout Optimization of Power-MOS Devices at DATE 2011
EdXact, post-layout verification specialist will be endorsed by ST-Ericsson in a testimonial on Optimization of Power-MOS Structures dedicated to Energy Management ICs at the upcoming DATE 2011 conference being held at AlpExpo in Grenoble, France.
EdxaTitle : « Optimization of Power-MOS Structures dedicated to Energy Management ICs»
Abstract:
Impact of metal routing on 'rdson' parameter of power-MOS devices is increasing with more advanced process nodes (65nm, 40nm). Capacity of Comanche tool to quickly extract thousands of pin to pin resistances enables us to achieve layout optimization by analysing resistances distribution from pads to any individual transistor. In addition, Jivaro reduction makes possible the spice simulation of the structure including both parasitic resistors and functional devices to extract rdson parameter.
Speaker : Jérôme Lescot, ST-Ericsson
When/ Where
Tuesday, March 15, 2011 - 17:50 - 18:10pm,
Exhibition Theatre, DATE Exhibition Floor