Memory
X-Fab and Anvo collaborate to offer Non-Volatile Memory Solutions
X-FAB Silicon Foundries and Anvo-Systems Dresden today announced a cooperative agreement to offer high-speed non-volatile memory solutions that combine SRAM, DRAM and SONOS FLASH technologies; the compact design results in a small silicon footprint that keeps device costs low.
In tAnvo-Systems Dresden’s novel nvSRAM approach offers multiple cost and energy-saving advantages compared to traditional Flash and EEPROM solutions. It combines the typical SRAM features with extremely robust, energy-efficient and cost-effective SONOS FLASH technology. The nvSRAM IP blocks come with unlimited and fast (20ns) read and write operation and a standard SRAM interface. A full parallel data backup up to 125Mb/s guarantees fast store operation. Because the energy for storage is gathered during the normal operation cycle, no additional customer control circuitry is needed. In addition, the compact design and small silicon footprint hold down device costs.
To guarantee stable and reliable production of the nvSRAM solutions, X-FAB has installed a dedicated 0.18 micrometer manufacturing process on 8-inch wafers optimized for highly reliable memories based on SONOS architecture. The special memory solutions developed by Anvo-Systems Dresden survive γ-ray sterilization.
Anvo-Systems Dresden, after introducing its serial nvSRAM product families earlier this year, recently released a new parallel 256k nvSRAM product family with 25ns access time, unlimited Read/Write cycles, multiple STORE options and unique security features. The company will present its parallel nvSRAM solution at the electronica show in Munich next week (Hall A6, Booth 565).
As part of X-FAB’s X-CHAIN design and supply chain partner network, Anvo-Systems is among more than 30 companies specialized in chip design, test, assembly, supply chain management or turnkey IC solutions. The network partners provide additional services to X-FAB’s customers that go beyond the pure-play foundry approach.