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TANAKA Denshi Kogyo to Establish New Plant in Hangzhou

12th January 2022
Tom Anstee
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TANAKA Holdings, has announced that its subsidiary, TANAKA Denshi Kogyo K.K. which is engaged in the production of various types of bonding wires, will establish a plant in Hangzhou City, China, for the production of aluminum bonding wires for power semiconductors.

Construction of this new plant forms part of TANAKA Denshi Kogyo's plans to increase its production capacity for aluminum bonding wires by approximately three-fold by 2025 in order to meet the growing global demand associated with the growth of power semiconductors.

TANAKA Denshi Kogyo has been producing various bonding wires and providing technical services at its subsidiary, TANAKA Electronics. With the recent imbalance of global supply and demand for semiconductors resulting in a worsening shortage of semiconductors, it has been a matter of urgency to establish a stable supply system for high-quality bonding wires as an important peripheral material for the semiconductor industry. To meet the growing demand associated with the domestic production of power semiconductors in China, in particular, the new plant will be established to provide a stable supply system for aluminum bonding wires.

As a leading manufacturer of bonding wire, TANAKA Denshi Kogyo continues to contribute to the semiconductor industry by supplying countries around the world even during states of emergency.

Power semiconductors are semiconductors that control and supply power (electricity) and are used in power supplies in electronic devices, motors, and switches. They are always used in electronic devices that have power circuits and are used in a wide range of applications, from everyday home appliances, such as PCs, smartphones, and televisions, to automotive and industrial equipment.

Bonding wires for power semiconductors are required to have the capability to carry large currents in extreme conditions, and aluminum has already been used in many power device fields for its excellent bonding properties and moisture resistance.

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