Innoscience adds new GaN devices to portfolio

The company’s INN100W135A-Q (RDS(on),max = 13.5 mΩ) and smaller package INN100W800A-Q (RDS(on),max = 80 mΩ) are both certified to AEC-Q101 and optimised for LiDAR as well as for high power density DC-DC converters, and Class D audio applications in the automotive sector.

The INN100W135A-Q and the ultra-compact INN100W800A-Q, with a WLCSP package measuring 2.13mm x 1.63mm and 0.9mm x 0.9mm respectively, offer significant benefits in terms of size and power efficiency.

Both devices are specifically tailored for the requirements of L2+/L3 assisted driving systems, with switching speeds up to 13 times faster and pulse widths reduced to one-fifth of those of silicon solutions. Parameters like Qg and Qoss are also improved by 1.5 to 3 times over their silicon counterparts. This results in medium to long-range recognition capabilities of 200/300m, essential for advanced driver assistance and autonomous driving applications.

“Both devices have been designed to meet the growing demand for efficiency and precision in driving assistance and autonomous driving technologies – GaN devices are rapidly replacing traditional silicon in critical automotive applications due to their superior performance. In LiDAR applications, it is well-understood that GaN enables higher resolution and greater detection distances while reducing power loss and temperature rise than is possible with traditional silicon technology," said Dr. Denis Marcon, General Manager, Innoscience Europe.

These automotive-grade GaN products have already entered mass production, with batch orders being fulfilled to meet demand.