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EuMW 2019: LDMoS and GaN solutions promenade in Paris

23rd September 2019
Mick Elliott
0

During European Microwave Week 2019 in Paris, Ampleon will participate in the exhibition, present several technical papers and sponsor the European Microwave Student Design Competition Thrust 2 “Wideband Power Amplifier Biasing Network Design” element.

On its stand, (B470), Ampleon will showcase a wide variety of new LDMOS and GaN solutions targeting 5G networks, aerospace and defence, non-cellular communications, industrial, scientific, medical, cooking and defrosting applications Highlights include:

  • Solutions for Mobile Broadband and 5G networks, offering the industry’s best compromise between efficiency, cost and size
  • New 65V and 50V Advanced Rugged Transistors (ART) in ceramic and plastic packages designed to unlock so far untapped levels of extreme ruggedness and ultra-high breakdown voltages
  • Easy-to-use 30-700W broadband and matched GaN transistors, enabling highest efficiency architectures without sacrificing performance
  • Industry leading 433MHz, 915MHz and 2.4GHz transistors, pallet modules and multi-kilowatt system reference designs tailored for industrial, cooking and defrosting applications
  • LDMOS radar transistors based upon 9th generation technology which is pushing the limit of LDMOS power density to enable best-in-class efficiency figures at a well-optimised cost structure

As well as the booth showcases and sponsorship, key Ampleon staff will present a number of technical papers during the course of the event including:

Sergio Pires, Advanced Concepts and Systems Group Leader,

WS-02 (EuMC/EuMIC) - RF Techniques for 5G Applications 

Title: Developing and testing 5G PAs; from the cable to OTA

Date: Sunday, September 29, 2019, Time: 08:30 – 17:50 Room: 741BC

Marek Schmidt-Szalowski, Modelling Engineer

EuMIC09: Modelling and Extraction Techniques

Title: Energy-based capacitance modelling for field-effect transistor stability analysis

Date: Monday, September 30, 2019, Time: 16:10, Room E01

Ali Isik, RF Design Engineer

EuMIC12 Interaction Session 1

Title: Experimental Analysis of In-package harmonic Manipulations with a 160W GaN HEMT Power bar

Date: Tuesday, October 1, 2019, Time: 0830-10.10

Jarod Geng, Senior Principal RF Engineer

MicroApps Theatre, (oral presentation)

Title: A Waveform Alignment Technique Enabling Broadband GaN Power Amplifier Design

Date: Tuesday, October 1, 2019, Time: 16:40

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