Based on LDMOS process technology, the BLC10G27XS-400AVT 400W asymmetric Doherty RF power transistor is designed for use in basestation multi-carrier applications operating in the 2.496 to 2.690GHz range. It uses Ampleon's ninth generation 28V LDMOS process technology.

Ampleon has announced the BLP2425M10S250P, a 250W RF power transistor for solid-state cooking and industrial, scientific and medical ISM applications in the 2400MHz to 2500MHz frequency band. Using Ampleon’s tenth-generation LDMOS process, BLP2425M10S250P operates with 67% drain efficiency, saving energy and simplifying the cooling requirements in high-power systems.

Ampleon has announced the BLU9H0408L-800P 800-Watt RF power transistor. Using Ampleon’s latest Gen9 (50V) LDMOS process technology, the BLU9H0408L-800P has been specifically designed for use in high-power radar systems operating in the 400 to 800MHz UHF frequency band.

Ampleon has released the BLF989E RF power transistor, which uses the very latest ninth-generation high-voltage (50V) LDMOS process technology. The BLF989E has been designed to deliver the highly efficient Doherty amplifiers required by the next generation of UHF TV transmitters.

Ampleon will be participating at the virtual International Microwave Symposium (IMS) that will be live-streaming from August 4 to August 6, 2020.

A complete 600-Watt RF Power LDMOS module for industrial, scientific and medical applications operating in the 915MHz ISM frequency band has been introduced by Ampleon.

Two additions have strengthened Ampleon’s 9th generation line-up of high-performance 50V Si LDMOS high-efficiency RF power transistors.

The BLP05H9S500P LDMOS-based power amplifier transistor from Ampleon is designed for use in industrial heating, defrosting, plasma lighting and medical applications. Operating at a frequency range of between 423 to 443MHz, the device can deliver up to 500W output power in pulsed or continuous wave modes and enables so far untapped drain efficiency levels of typically 75%.

Ampleon has bolstered its land mobile radio portfolio with a line of 12V laterally diffused metal oxide semiconductor (LDMOS) transistors. This new 12V LDMOS platform is based upon the proven 9th generation of Ampleon’s LDMOS technology and will target commercial, public safety and defence mobile radio applications.

During European Microwave Week 2019 in Paris, Ampleon will participate in the exhibition, present several technical papers and sponsor the European Microwave Student Design Competition Thrust 2 “Wideband Power Amplifier Biasing Network Design” element.

At the IEEE International Microwave Symposium (IMS) held in Boston, Massachusetts, USA, Ampleon announced it will participate in order to introduce its wide variety of new LDMOS and GaN solutions targeting telecom, aerospace and defence, NCC, ISM, cooking and defrosting applications.

The first of a family of RF power devices based upon its Advanced Rugged Technology (ART) derivative of the proven 9th generation high voltage LDMOS process technology, has been released by Ampleon. The process has been developed to enable the implementation of extremely rugged transistors with operating voltages of up to 65V.

A high-efficiency 750W RF power transistor has been announced by Ampleon, with the BLF0910H9LS750P, which has a high efficiency of 72.5% at 915MHz and a rugged design. The device operates at frequencies from 902MHz to 928MHz making it suitable for use in industrial, scientific, and medical systems, as well as for professional cooking applications.

Designed for pulsed and CW applications operating in the 2,400 to 2,500MHz frequency range, the 500W BLC2425M10LS500P LDMOS RF power transistor has been announced by Ampleon. Suitable for use in a wide range of cooking RF energy applications, the BLC2425M10LS500P has an excellent high-power to footprint ratio as it delivers 500W CW from a single SOT1250 air cavity plastic package.

  The compact dual-stage 250W LDMOS RF power module BPC2425M9X2S250-1 has been announced by Ampleon. Designed for high power continuous wave (CW) industrial, scientific and medical (ISM) applications operating in the 2,400 to 2,500MHz frequency band, the high efficiency module measures 72x34mm.

The BLF13H9L750P, a 750 Watt Gen9HV LDMOS RF power transistor, launched by Ampleon at European Microwave Week, is designed specifically for use in particle accelerator applications operating in the 1.3 GHz spectrum.

A high power rugged BLF189XRA RF power transistor aimed at broadcast FM radio applications transmitting in the 88 – 108 MHz frequency range was unveiled at European Microwave Week in Madrid (September 25-27). Operating from an industry standard 50V power source the BLF189XRA delivers over 1,600W (CW).

RF power products, as well as technical expertise in high-power RF design will be presented by Ampleon at European Microwave Week in Madrid (September 25-27). The company will support the popular Student School during the event by providing a platform to share innovation in the field of high-power semiconductors using Ampleon devices.

Ampleon has announced an addition to its line-up of high power LDMOS RF transistors suitable for use in Continuous Wave (CW) RF energy applications. The BLC2425M10LS250 power transistor is highly efficient, achieving up to 69% efficiency and is capable of providing up to 250W output power in the 2,400-2,500 MHz frequency range.

Ampleon has announced the introduction of its BLF989 RF power transistor designed for UHF broadcast applications such as DVBT and UHF analog TV. Using Ampleon’s latest Gen9HV high voltage LDMOS process, this 140W (average – 700W peak) transistor, the first broadcast device to use this process technology, offers a high operating efficiency of typically > 34% (Class AB) and is available in a ceramic SOT539 package format either with ...