Design
Synopsys' StarRC Extraction Solution Certified by UMC for 28-nm Designs
Synopsys, Inc. today announced that UMC has certified Synopsys' StarRC parasitic extraction solution for its latest 28-nanometer (nm) process technologies. The StarRC solution delivered silicon-validated accuracy on UMC's evaluation designs to meet the qualification criteria for its advanced 28-nm Poly SiON and High K/Metal gate processes. The StarRC technology files are immediately available to UMC customers working with its 28-nm processes.
UMC StarRC is a key component of Synopsys' Galaxy™ Implementation Platform and the industry-leading parasitic extraction solution for system-on-chip (SoC), custom digital, analog/mixed-signal (AMS) and memory designs. StarRC's 28-nm features include modeling for key parasitic effects, including advanced retargeting effects, new via etch and coupling effects, area-dependent via resistance and capacitance, polynomial-based diffusion resistance, and enhanced layout-dependent device parasitic extraction. StarRC also offers other advanced capabilities for 28-nm designs, including unified Rapid3D technology for fast, high-accuracy 3D extraction, enhanced multicore performance and scalability, proprietary reduction capabilities and the smallest netlist for signoff of the largest SoC designs.
StarRC continues to lead the industry in use for parasitic extraction and signoff of advanced node designs, said Antun Domic, senior vice president and general manager of Synopsys' Implementation Group. UMC's validation of StarRC extends the benefits of our state-of-the-art process modeling and extraction technology to UMC's 28-nanometer customers, enabling them to deliver their high-performance 28-nanometer devices to market with increased confidence.