Synopsys Delivers Comprehensive Design Implementation Solution for Samsung's Leading-Edge 14-Nanometer FinFET Process

The silicon-validated solution developed under exclusive engineering collaboration accelerates adoption of the new 3-D FinFET devices for Samsung's 14-nanometer (nm) process geometry.



Our close collaboration with Synopsys is driven by a firm commitment to enable successful deployment of 14 nanometer FinFET technology, said Kyu-Myung Choi, senior vice president, System LSI infrastructure design center, Samsung Electronics. With the complete, silicon-validated solution developed with Synopsys, we enable our customers to create new, innovative products by taking advantage of the power and performance benefits offered by this cutting-edge 14LPE process.



Our delivery of a comprehensive design implementation solution for Samsung's FinFET process underscores our commitment to advance the state-of-the-art in semiconductor design, said Antun Domic, senior vice president and general manager of the Implementation Group at Synopsys. Deep collaboration is essential for us to address our mutual customers' FinFET needs. We have focused on foundational technologies, including 3-D parasitic extraction and device simulations, as well as delivery of FinFET-ready design implementation and in-design verification tools.