RF Micro Devices announced today that it has been awarded a $1.5 million R&D contract by the Office of Naval Research (ONR) related to gallium nitride (GaN) microelectronics, including the development of materials, device fabrication and high power circuits.

RF Micro Devices today announced a new family of integrated configurable components for multiple markets. The highly integrated components, comprised of the RFFC207x and RFFC507x product families, perform multiple common RF functions in a reduced footprint while delivering the flexibility necessary to develop radio systems that operate over a wide dynamic range and across a broad range of frequencies and channel bandwidths.

RF Micro Devices, Inc. today announced the expansion of its broadband product portfolio targeting Hybrid Fiber Coax (HFC) transmission network hardware, cable head end, cable hub equipment, and Multi Dwelling Unit/Multiple Tenant Unit (MDU/MTU) equipment. The new broadband products enhance cable operators’ network performance and enable increased bandwidth to support rapidly growing digital-centric services, such as HDTV, 3D HDTV and “mid-spl...

RF Micro Devices, Inc. today announced the expansion of its broadband product portfolio targeting Hybrid Fiber Coax (HFC) transmission network hardware, cable head end, cable hub equipment, and Multi Dwelling Unit/Multiple Tenant Unit (MDU/MTU) equipment. The new broadband products enhance cable operators’ network performance and enable increased bandwidth to support rapidly growing digital-centric services, such as HDTV, 3D HDTV and “mid-spl...

RF Micro Devices, Inc. today announced availability of the RFPD2650, a new gallium nitride-based hybrid power doubler amplifier that delivers industry-best low distortion performance with the flexibility to optimize for supply current or energy consumption. The RFPD2650 hybrid power doubler amplifier module is specifically designed for CATV infrastructure applications including hybrid fiber coaxial (HFC) optical nodes.

RF Micro Devices today announced that Samsung has selected three highly integrated RFMD components to deliver superior WiFi connectivity in the recently-introduced GALAXY Tab™ Android tablet.

RF Micro Devices today announced that Samsung has selected three highly integrated RFMD components to deliver superior WiFi connectivity in the recently-introduced GALAXY Tab™ Android tablet.

RF Micro Devices, Inc announced that RFMD has qualified and production released the RF3934, a 140-watt highly-efficient gallium nitride (GaN) RF unmatched power transistor (UPT) with superior performance versus competing GaAs and silicon power technologies.

RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced the Company has further expanded its Foundry Services to deliver multiple molecular beam epitaxial (MBE) platforms, epitaxial characterization and epitaxial development structures, including specialty and high-volume, arsenic- and phosphorus-based processes.

RF Micro Devices today announced the introduction of the RFUV5945A during the European Microwave Week (EuMW) 2010 Conference. The RFUV5945A I/Q up-converter is the newest addition to RFMD’s rapidly growing portfolio of innovative components for microwave and millimeter wave radio applications. It is ideally suited for a variety of end markets, including point-to-point microwave radio, military radio, VSAT, and test and measurement.

RF Micro Devices today announced the introduction of the RFUV5945A during the European Microwave Week (EuMW) 2010 Conference. The RFUV5945A I/Q up-converter is the newest addition to RFMD’s rapidly growing portfolio of innovative components for microwave and millimeter wave radio applications. It is ideally suited for a variety of end markets, including point-to-point microwave radio, military radio, VSAT, and test and measurement.

RF Micro Devices, a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced the Company has added its world-class Gallium Arsenide (GaAs) technology to RFMD’s foundry services portfolio and will begin providing a full suite of GaAs Pseudomorphic High Electron Mobility Transistor (pHEMT) technologies to customers of its Foundry Services business unit.

RF Micro Devices announced the introduction of the ML2730, a single-chip fully integrated Frequency Shift Keyed (FSK) transceiver with integrated power amplifier (PA) and low noise amplifier (LNA). The ML2730 expands RFMD's portfolio of ISM band single-chip transceivers, covering 900 MHz, 2.4GHz and 5.8GHz.

RF Micro Devices announced today it is teaming with Ember Corporation to introduce ZigBee front end modules (FEMs) for smart grid applications that give utilities and consumers more control over how they monitor and save energy. ZigBee is a global wireless networking standard for monitoring and control in a variety of applications such as energy management, safety and security, lighting and appliances.

RF Micro Devices announced today it is teaming with Ember Corporation to introduce ZigBee front end modules (FEMs) for smart grid applications that give utilities and consumers more control over how they monitor and save energy. ZigBee is a global wireless networking standard for monitoring and control in a variety of applications such as energy management, safety and security, lighting and appliances.

RF Micro Devices introduced the RF7178 – said to be the cellular industry's first front end module to integrate a quad-band, class 12-compliant GSM/GPRS power amplifier, a pHEMT antenna switch and receive SAW filters.

RF Micro Devices announced it has expanded its industry-leading 3G front end product portfolio with the RF7234, RFMD's second-generation TD-SCDMA power amplifier (PA). The dual-mode RF7234 (TD-SCDMA and WCDMA band 1) follows RFMD's first-generation TD-SCDMA PA, the RF3266, which has secured multiple design wins across leading TD-SCDMA reference designs and is forecast to support multiple top-tier handset manufacturers headquartered in Asia and Eu...

RF Micro Devices announced today that the Company has successfully qualified and released its first high power RF CMOS switch using high-resistivity silicon substrates sourced at a leading silicon foundry. RFMD is leveraging this new process technology, as well as patent-pending design and circuit-related technology developed by RFMD, to introduce a product portfolio of high-performance silicon switch-based products for next-generation 3G and 4G ...

RF Micro Devices today introduced three new products – the RF7170, RF7171, and RF7172, expanding RFMD's industry-leading family of dual- and quad-band GSM/GPRS transmit modules.

RF Micro Devices, Inc. today announced the addition of four new products to RFMD's portfolio of 3G transmit modules. The four new products – the RF3230, RF3231, RF3232, and RF3171 – are designed to accelerate the implementation of 3G entry-level feature phones supporting one-to-two bands of WCDMA and two-to-four bands of GSM/GPRS (also referred to as WGPRS). Each new transmit module (TxM) features a GSM/GPRS power amplifier (PA) and an integr...