RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced that Samsung has selected RFMD's PowerSmart™ power platforms and WiFi components to enable a broad portfolio of next-generation 3G/4G devices. The highly anticipated Galaxy S 2 and Galaxy Tab 10.1 will both feature RFMD's PowerSmart, while the Galaxy Tab 1...

RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced that Samsung has selected RFMD's PowerSmart™ power platforms and WiFi components to enable a broad portfolio of next-generation 3G/4G devices. The highly anticipated Galaxy S 2 and Galaxy Tab 10.1 will both feature RFMD's PowerSmart, while the Galaxy Tab 1...

RF Micro Devices today announced the expansion of the Company's 3G product portfolio to include a complete power platform for entry-level 3G handsets. The RF323x power platform, comprised of the RF323x and RF72xx product families, provides handset manufacturers a complete reference design for the implementation of multi-region multimode 3G handset platforms.

RF Micro Devices announced availability of the Company's RF724x family of HSPA+ power amplifiers. RFMD's RF724x power amplifiers are ultra-high efficiency, single-mode 3G/4G components that reset the bar for performance in smartphones, tablets, and other high-performance data-centric connected devices.

RFMD's new RF9802 and RF9801 build upon the successful RF716x GPRS family, incorporating full EDGE capability while maintaining a common footprint for ease of phone platform design. Using RFMD’s patented PowerStar® architecture, RF9802 includes such features as Power Flattening, VBATT Tracking, and EDGE Low Power Mode.

RF Micro Devices, Inc. today announced it has received its first volume production orders for its PowerSmart power platforms. The production orders are in support of a highly anticipated smartphone and tablet product family to be launched by a leading cellular handset manufacturer beginning in the March, 2011, quarter.

RF Micro Devices, Inc. today announced it has received its first volume production orders for its PowerSmart power platforms. The production orders are in support of a highly anticipated smartphone and tablet product family to be launched by a leading cellular handset manufacturer beginning in the March, 2011, quarter.

RF Micro Devices today announced it has achieved a major performance milestone related to its PowerSmart power platforms. RFMD’s PowerSmart power platforms are a new product category reshaping the future of multimode, multi-band cellular RF architectures.

RFMD’s new RFRX8888 video receiver performs transimpedance amplification of the differential input from a high performance 1550nm optical wavelength photo detector (PD), all with best-in-class noise performance. This IC's output is linear low distortion RF from 48 MHz to 1002 MHz. RFRX8888 is ideal for 1550nm optical wavelength RF analog or digital overlay video receive circuitry employed in xPON FTTP ONT triplexer and quadplexer modules.

RF Micro Devices, Inc. today unveiled the RF5632, a 2.3–2.7 GHz power amplifier IC. The RF5632 is optimized specifically for WiMAX systems and can be designed into multiple applications, including customer premises equipment (CPE), gateways, access points, LTE wireless infrastructure, and WiFi-based wireless high definition interface (WHDI) for wireless video distribution networks.

RF Micro Devices, Inc. today unveiled the RF5632, a 2.3–2.7 GHz power amplifier IC. The RF5632 is optimized specifically for WiMAX systems and can be designed into multiple applications, including customer premises equipment (CPE), gateways, access points, LTE wireless infrastructure, and WiFi-based wireless high definition interface (WHDI) for wireless video distribution networks.

RF Micro Devices, Inc. announced today it has teamed with Freescale Semiconductor to deliver ZigBee solutions for a broad range of smart grid applications.

RF Micro Devices today announced that RFMD has production released the RF3932, a 75-watt, highly efficient gallium nitride (GaN) RF unmatched power transistor (UPT) that delivers superior performance versus competing GaAs and silicon power technologies.

RF Micro Devices today announced the expansion of the Company's RF component catalog to include two new high linearity differential IF mixers: the RFMX0015 and RFMX1015. Both new products are optimized for operation across a broad range of end markets, including cellular infrastructure, wireless backhaul and other high-performance wireless systems.

RF Micro Devices, Inc. (Nasdaq: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced the launch of its broadband 6-bit digital step attenuator product portfolio, with the availability of the RFSA2614 and the RFSA2624. RFMD's newest high-performance components are optimized for operation across multiple market segments, including 3G/4G/LTE cellu...

RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced today it has teamed with Freescale Semiconductor to deliver ZigBee® solutions for a broad range of smart grid applications.

RF Micro Devices, Inc today announced it will showcase the Company's industry-leading high-performance RF components at electronica 2010, in Munich from November 9 to November 12, 2010.

RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today unveiled the RF5632, a 2.3—2.7 GHz power amplifier IC. The RF5632 is optimized specifically for WiMAX systems and can be designed into multiple applications, including customer premises equipment (CPE), gateways, access points, LTE wireless infrastructure, and WiFi-base...

RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced that RFMD® has production released the RF3932, a 75-watt, highly efficient gallium nitride (GaN) RF unmatched power transistor (UPT) that delivers superior performance versus competing GaAs and silicon power technologies.

RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced the expansion of the Company's RF component catalog to include two new high linearity differential IF mixers: the RFMX0015 and RFMX1015. Both new products are optimized for operation across a broad range of end markets, including cellular infrastructure, wireles...