Qorvo
- 2300 NE Brookwood Parkway
Hillsboro,
Oregon 97124
United States of America - 1-844-890-8163
- http://www.qorvo.com/
Qorvo Articles
Efficient RF front end covers 698MHz-2.7GHz
Qorvo has expanded its RF Fusion family of complete RF Front End (RFFE) solutions, which combine power amplifier efficiency, filtering, duplexing and cellular switching to deliver excellent performance and enable a single scalable source for the entire cellular front end. RF Fusion has been selected to support multiple leading smartphones.
RF filters enhance data throughput & battery life
Qorvo has announced several high-performance RF filters that provide faster data throughput and longer battery life for next-gen 4G smartphones and other mobile devices. These latest additions to Qorvo's line of filters leverage the company's filter technologies to enhance the overall mobile user experience and optimise efficient use of limited spectrum.
RF solution supports 4G smartphone
Qorvo has announced that it has commenced volume production of the RF Fusion complete RF Front End (RFFE) solution in support of a flagship 4G smartphone from a top-five smartphone manufacturer. The flagship smartphone is expected to launch in the first half of calendar 2015.
GaAs pHEMTprocess technology provides higher gain/bandwidth
A GaAs (Gallium Arsenide ) pHEMT (pseudomorphic high electron mobility transistor) process technology, which provides higher gain/bandwidth and lower power consumption than competing semiconductor processes, has been introduced by Qorvo. The TQPHT09 is a 90nm pHEMT process that supports the company’s next-gen optical product portfolio. This process is suitable for next-gen high frequency, high performance amplifiers required for 1...
Drivers & TIAs enable next-gen optical networks
Optical transport products, designed for long haul, metro and data centre applications, have been released by Qorvo. The portfolio is comprised of three drivers and two Transimpedance Amplifiers (TIA), which deliver multi-channel and low power consumption options that reduce cost, enable outstanding channel-to-channel isolation while shrinking product form factor, and maximise integration and signal fidelity for network equipment manufacturers.&n...
TriQuint semiconductor Inc wins gallium nitride contract from the Defense Advanced Research Projects Agency
TriQuint has won a new gallium nitride contract from the Defense Advanced Research Projects Agency to enable a threefold increase in circuit power handing. The Near Junction Thermal Transport effort will focus on reducing heat that can limit GaN circuit capabilities in defense and commercial systems.
TriQuint's New 2G 3G 4G Base Station RF Filters Lower Insertion Loss, Handle More Power
TriQuint Semiconductor has released three new RF SAW filters that can cost-effectively improve performance in 3G / 4G network infrastructure and legacy system applications. TriQuint is focused on bringing performance innovation to the essential building blocks of global networks. These networks are fraught with mobile data traffic demand and continued double-digit growth is expected.
TriQuint Introduces TRITIUM Duo, Smallest Dual-Band Power Amplifier Solution for 3G and 4G Smartphones
TriQuint Semiconductor, Inc has unveiled the industry’s smallest dual-band PA duplexer (PAD) for global 3G and 4G smartphones. The new TRITIUM Duo family combines two band-specific power amplifiers (PAs) and duplexers in a single compact module, effectively replacing up to twelve discrete components.
TriQuint Builds Momentum with Industry's Smallest Transmit Modules, Delivering Design Flexibility for 2G / 3G / 4G Mobile Device
TriQuint Semiconductor, Inc is building market momentum with two QUANTUM Tx modules that are 40% smaller than the previous generation. These transmit modules integrate TriQuint's new ultra-small GSM core, and enable more flexibility for smartphones, feature phones and low-cost voice-only phones.
New BTS SAWs Deliver Performance Edge
TriQuint's newest innovative RF SAW filters offer key advantages including lower insertion loss, high attenuation and excellent power handling for WCDMA, LTE and TD-SCDMA base stations.
New BTS LNAs Can Reduce BOMs
TriQuint's latest innovative LNA RF solutions use integrated matching to reduce BOMs. These broadband devices also satisfy key linearity requirements for 3G/4G infrastructure and defense/aerospace applications.
TriQuint WLAN solutions power smartphones worldwide
TriQuint Semiconductor, Inc announced its two power amplifiers (PA) for WLAN connectivity lead the market,* since ramping to production last year. Both the single and dual-band PAs are designed to augment the WiLink™ 6.0 solution and recently launched WiLink 7.0 solution from Texas Instruments Incorporated (TI). The TQM679002A and TQP6M9002 offer faster data exchange rates, extended battery life, and better amplification of weak signals than co...
TriQuint demonstrates gallium nitride leadership by achieving key development milestones
TriQuint Semiconductor, Inc has announced several milestones related to its industry leading Gallium Nitride (GaN) developments. Together with customers and various US Government agencies, TriQuint is working to define the future of RF, where it believes GaN will play a key role.
Triquint Semiconductor, Agilent Technologies collaborate on next-generation wireless design flow
TriQuint Semiconductor have announced results for building next-generation RF solutions. This includes enhanced TriQuint process design kits with support for Agilent's Advanced Design System 2011 EDA software and the development of an ADS RF Module PDK for TriQuint's RFIC/MMIC and RF Module integrated design flow.
New Triquint base station RFICs integrate unique protections for data-intensive mobile device networks
TriQuint Semiconductor has released the first members in a new family of integrated RF products that lower power consumption while protecting mobile networks from disruption and service failures. TriQuint's newest base transceiver station (BTS) network devices join 12 other new power and filter infrastructure solutions introduced in the first half of 2011.