Nexperia
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- http://www.nexperia.com
Nexperia Articles
ITEC emerges as independent semiconductor manufacturer
ITEC, the semiconductor equipment manufacturer founded in 1991 by Philips (now Nexperia), has announced its launch as a separate independent entity. ITEC remains part of the Nexperia group. This move will allow ITEC to address the third-party market in time to serve the current semiconductor boom. It provides manufacturers worldwide access to disruptive manufacturing solutions that are built to last.
Eight-inch wafer line in Manchester gets underway
Nexperia has announced that the first products to be made in the company’s new eight-inch wafer line in Manchester, UK, will be low RDS(on), low Qrr 80V and 100V MOSFETs using its latest NextPower silicon technology.
Nexperia invests $700m to boost production capacity
Nexperia has announced the latest stage of its global growth strategy, confirming a $700m investment over the next 12-15 months at its European wafer fabs, assembly factories in Asia and global R&D sites to increase production capacity.
Low RDS(on) 40V MOSFETs deliver high power density
Nexperia has announced new 0.55mΩ RDS(on) 40V power MOSFETs in the high-reliability LFPAK88 package for automotive (BUK7S0R5-40H) and industrial (PSMNR55-40SSH) applications. These devices are the lowest RDS(on) 40V parts that Nexperia has ever produced and more importantly, they deliver greater power densities than traditional D2PAK devices.
New Trench Schottky rectifiers increase efficiency
Nexperia has extended its portfolio of Trench Schottky rectifiers with devices rated at up to 100V and 20A. The new parts feature excellent switching behavior and leading thermal performance. They are available in Nexperia’s Clip Bond FlatPower (CFP) packages which have a much smaller footprint than SMA/SMB/SMC components.
Nexperia promotes GaN in automotive design
At this year’s PCIM Digital Days, Nexperia highlighted its work in the automotive sector and GaN technology.
650V GaN FETs for 80 PLUS Titanium-class power supplies
Nexperia has announced volume availability of its second-generation 650V power GaN FET device family, offering significant performance advantages over previous technologies and competitive devices.
ESD protection devices for high-speed interfaces
Nexperia has announced a new range of ESD protection devices aimed specifically at protecting the ever-increasing number of high-speed interfaces found in automotive applications, especially the in-vehicle networks (IVN) associated with infotainment and vehicle communications.
MOSFET line-up with AEC-Q101-qualified half-bridge option
Nexperia has announced a series of half-bridge (high side & low side) automotive MOSFETs constructed in the space-saving LFPAK56D package format. The half-bridge configuration of two MOSFETS is a standard building block for many automotive applications including motor drives and DC/DC converters.
Nexperia plans to grow production and increase R&D spend
Nexperia has confirmed that it will be making significant additional global investments in manufacturing capacity and research and development during 2021. The new investments are in line with a growth strategy that last year saw Wingtech Technology, Nexperia’s parent company, commit $1.85bn to building a new 300mm power semiconductor wafer fab in Lingang, Shanghai. This factory, which will go live in 2022, will have an estimated annua...
Compact protection for high-speed data lines
Nexperia has announced three new TrEOS protection devices that provide a compact method to suppress ESD in USB3.2, HDMI2.1 and other high-speed data lines. The new PUSB3BB2DF, PESD5V0C2BDF, PESD4V0Z2BCDF devices provide ESD protection and system robustness by combining high RF performance with very low clamping and very high surge capability.
80V resistor-equipped transistors for high voltage bus circuits
Nexperia has announced an 80V RET (Resistor-Equipped Transistor) family. These new RETs or ‘digital transistors’ provide enough headroom for use in 48V automotive board net (e.g. mild hybrid and EV cars) and other higher voltage circuits which are often subject to large spikes and pulses that previous 50V parts cannot handle.
Leadless CAN-FD protection diodes with ESD performance
Nexperia has announced new leadless ESD protection devices for CAN-FD applications. Devices are available in leadless packages with side-wettable flanks that enable AOI tools to be used. Fully AEC-Q101-qualified, the PESD2CANFDx series parts also offer ESD and RF performance, and save PCB space.
AEC-Q101 MOSFETs with repetitive avalanche performance
Nexperia has launched a new AEC-Q101-qualified Repetitive Avalanche Application Specific FET (ASFET) portfolio focused on powertrain applications. The technology has been tested to one billion avalanche cycles and can be used to control automotive inductive loads such as solenoids and actuators. In addition to providing a faster turn-off time (up to four times), designs can be simplified through a reduced BOM count.
Application specific FETs category for optimised MOSFETs
Nexperia has responded to industry’s demands to maximise performance by defining a new MOSFET product group. Application Specific FETs (ASFETs) feature MOSFETs with optimised parameters for specific applications. By focusing on individual applications, significant improvements can be offered.
Nexperia LED drivers in DFN package with side-wettable flanks
Nexperia has announced a new range of LED drivers in the space-saving DFN2020D-6 (SOT1118D) package. This case style features side-wettable flanks (SWF) which facilitate the use of AOI (automated optical inspection), and improve reliability. This is the first time LED drivers have been available in this beneficial package.
Nexperia common mode filter with ESD protection
Nexperia has announced its new PCMFxHDMI2BA-C, a combined, highly efficient, common mode filter and ESD protection device with the widest 10GHz differential bandwidth. It is suitable for the latest HDMI 2.1 standard up to 12G FRL, where eye-diagram tests were passed even with ‘worst cable model’.
TrEOS ESD protection from Nexperia with high signal integrity
Nexperia has introduced four new TrEOS ESD protection devices that are AEC-Q101- qualified for automotive use and high temperature capable up to 175°C. In common with all TrEOS components, the new parts combine extremely low capacitance ensuring high signal integrity, extremely low clamping and high robustness for modern automotive interfaces.
Is the MOSFET figure of merit (FoM) still relevant?
As gate drivers are now capable of efficiently meeting large Qg requirements and faster switching topologies create smaller, more efficient systems, some often ignored parameters have now become system-critical.
Nexperia launches ‘Power Live’ 2020
Nexperia has announced ‘Power Live’, a virtual conference that will take place on 2nd-3rd July, and will cover a wide range of subjects related to power electronics including GaN devices, Silicon Germanium (SiGe) rectifiers, automotive applications and packaging technology.