Innoscience Technology has collaborated with the Bern University of Applied Sciences (BFH) to deliver a reference demo that employs Innoscience's 650V InnoGaN HEMT devices in a multilevel topology to address 850VDC applications such as e-mobility motor drivers, solar and industrial inverters, EV fast chargers, and potentially EV drivetrains.

Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, will continue to demonstrate its focus and 100% commitment to the burgeoning GaN market via a powerful presence at the upcoming PCIM conference and exhibition in Nuremberg, May 9th – 11th.

Innoscience Technology has launched the first in a new family of SolidGaN integrated GaN devices.

Innoscience will be attending the upcoming Applied Power Electronics Conference (APEC) event in Orlando, Florida from 19th – 23rd March 2023 at the Orange County Convention Centre.

Innoscience Technology has demonstrated its ability to support high volume demand in GaN FETs globally, since it first started mass production on 8" wafer lines in 2019.

Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost gallium-nitride-on-silicon (GaN-on-Si) power solutions, has signed a global distribution agreement with Richardson RFPD, an Arrow Electronics company.

Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost gallium-nitride-on-silicon (GaN-on-Si) power solutions, announced a new low RDS(on) 650V E-mode GaN HEMT device.

nnoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost gallium-nitride-on-silicon (GaN-on-Si) power solutions, will play a full and active role at the upcoming Electronica exhibition.

Innoscience Technology has signed a distribution agreement with Finepower, an engineering and distribution company focused on power electronic applications with operations in Germany and China.

Paige West talks with Denis Marcon, General Manager of Innoscience Europe about GaN technology, its importance, the GaN device technology that Innoscience offers and the material’s future.

Innoscience Technology, a company founded to create a global energy ecosystem based on low-cost gallium-nitride-on-silicon (GaN-on-Si) power solutions, has opened an office in Gwangmyeong, near Seoul, Korea, to provide technical and marketing services to the country’s consumer and automotive market.

Innoscience Technology, a supplier of high-performance, low-cost gallium-nitride-on-silicon (GaN-on-Si) power solutions, has signed a global distribution agreement with WPG Holdings (WPG), giving customers in all parts of the world access to Innoscience’s leading high and low voltage normally-off (enhancement mode) GaN HEMTs.  

Innoscience Technology, a company founded to create a global energy ecosystem based on high performance, cost-effective Gallium Nitride on Silicon (GaN-on-Si) power solutions, has announced the INN40W08, a 40V bi-directional GaN-on-Si enhancement mode high-electron-mobility-transistor (HEMT) for mobile devices, including laptops and cellular phones. The INN40W08 HEMT has been developed using the company's advanced InnoGaN technology which feature...

Innoscience Technology has announced the official launch of its international operations in the USA and Europe. Headquartered in Suzhou, China, Innoscience is poised to support customers through the addition of design and sales support facilities in Santa Clara, California, and Leuven, Belgium.