Alliance Memory has announced that its 512M SDRAM devices, which it recently acquired from Micron Semiconductor, will be available with their original Micron part numbers into 2017. 

A line of high-speed CMOS DDR SDRAMs, which provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in industrial, medical, communications and telecomms products, has been introduced by Alliance Memory. The line of devices consists of the AS4C32M8D1, a 256Mb DDR SDRAM, the AS4C64M8D1 a 512Mb DDR SDRAM and the AS4C64M16D1, a 1Gb DDR SDRAM. The devices are available in a 60-ball 8x13x1.2mm TFBGA package or a ...

Alliance Memory has partnered with Micron Semiconductor to supply and extend availability of support for three 512M synchronous DRAM (SDRAM) devices that Micron discontinued with Micron PCN #30995. Alliance Memory will be offering Micron's 32M x 16 MT48LC32M16A2P-75:C (commercial temperature), 32M x 16 MT48LC32M16A2P-75 IT:C (industrial temperature), and 64M x 8 MT48LC64M8A2P-75:C.

Designed to increase efficiency and extend battery life in compact portable devices, a line of high-speed mobile CMOS DDR SDRAMs has been released by Alliance Memory. The AS4C16M16MD1, AS4C32M16MD1, AS4C16M32MD1, AS4C64M16MD1, AS4C32M32MD1 and AS4C64M32MD1 modules are available in 256Mb, 512Mb, 1Gb and 2Gb and feature low power consumption of 1.7-1.95V.

High-speed CMOS SDRAMs and mobile low-power DDR, DDR2 and DDR3 SDRAMs, which feature a wide range of densities, configurations, package options and temperature ratings, are to be exhibited at electronica 2014 in Hall A5, Booth 224. The drop-in, pin-for-pin-compatible devices, manufactured by Alliance Memory, are suitable for use products requiring high memory bandwidth.

Alliance Memory has introduced a new line of high-speed CMOS double data rate 3 synchronous DRAMs (DDR3 SDRAM) and low-voltage DDR3L SDRAMs with densities of 1 Gb, 2 Gb, and 4 Gb in 78-ball 9 mm by 10.5 mm by 1.2 mm and 96-ball 9 mm by 13 mm by 1.2 mm FBGA packages. With their double data rate architecture, the devices released today offer extremely fast transfer rates of up to 1600 Mbps/pin and clock rates of 800 MHz.

Expanding the company's portfolio of high-speed CMOS synchronous DRAMs (SDRAMs), Alliance Memory has introduced the 2m x 32 AS4C2M32S-6TIN, AS4C2M32S-6BIN and AS4C2M32S-7BCN; 4m x 32 AS4C4M32S-6TIN, AS4C4M32S-6BIN and AS4C4M32S-7BCN; and 8m x 32 AS4C8M32S-7BCN x32 devices in the 90-ball 8x13x1.2mm TFBGA, and 86-pin 400-mil plastic TSOP II packages.

A line of high-speed CMOS DDR2 SDRAMs has been announced by Alliance Memory. The devices feature densities of 512Mb (AS4C32M16D2) and 1Gb (AS4C64M16D2, AS4C128M8D2) in 60-ball 8 x 10 x 1.2-mm and 84-ball 8 x 12.5-x 1.2-mm FBGA packages.

A line of high-speed CMOS DDR SDRAMs with densities of 64Mb, 128Mb, 256Mb and 512Mb has been announced by Alliance Memory. The 64Mb (AS4C4M16D1-5TIN), 128Mb (AS4C8M16D1-5TIN), 256Mb (AS4C16M16D1-5TIN), and 512Mb (AS4C32M16D1-5TIN) devices havew an industrial temperature range of -40°C to +85°C.

K. K. Fan has joined Alliance Memory as its director of operations in Taiwan. Mr. Fan holds a bachelor's degree in industrial management from the National Taiwan University of Science and Technology and an MBA in technology management from the National Chiao Tung University.

Extending its 64M and 128M lines of high-speed CMOS synchronous DRAMs, Alliance Memory has today introduced a new 2M x 32 device in the 90-ball 8-mm by 13-mm by 1.2-mm TFBGA package and a 4M x 32 device in the 86-pin 400-mil plastic TSOP II package. The AS4C2M32S-7TCN and AS4C4M32S-7TCN provide reliable drop-in, pin-for-pin compatible replacements for a number of similar solutions in industrial, telecom, and consumer products requiring high memor...

Alliance Memory introduce a new line of high-speed CMOS double data rate synchronous DRAMs  with densities of 64 Mb (AS4C4M16D1), 128 Mb (AS4C8M16D1), 256 Mb (AS4C16M16D1), and 512 Mb (AS4C32M16D1). These devices provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in medical, communications, industrial, and consumer products requiring high memory bandwidth, and they are particularly well-suited to ...

Alliance Memory today expands its line of legacy high-speed CMOS SRAMs with two new 16M ICs. Featuring fast access times of 10 ns, the AS7C316096A (2048K x 8) and AS7C316098A (1024K x 16) are both offered in the 48-pin, 12-mm by 20-mm TSOP-1 package.

Alliance Memory today expands its line of legacy low-power CMOS SRAMs with a new 32M IC (2M x 16 / 4M x 8 switchable), the company's highest density low-power device to date. Operating from a single power supply of 2.7 V to 3.6 V and offering a fast access time of 55 ns, the AS6C3216 is optimized for low-power industrial, telecom, medical, and automotive applications, and it is particularly well-suited for battery backup non-volatile memory.

Alliance Memory today extended its 128M and 256M lines of high-speed CMOS synchronous DRAMs with new devices in a 54-ball 8 mm by 8 mm by 1.2 mm TFBGA package. These 8M x 16 and 16M x 16 SDRAMs feature fast access time from clock down to 4.5 ns at a 5-ns clock and clock rates of 143 MHz.

Alliance Memory today introduced a new high-speed CMOS synchronous DRAM (SDRAM) with a low density of 16 Mb in a 50-pin, 400-mil plastic TSOP II package. The AS4C1M16S offers a fast access time from clock of 5.4 ns at a 7-ns clock cycle, and a fast clock rate of 143 MHz.

Alliance Memory today expands its line of legacy low-power CMOS SRAMs with a new 4M IC (512K x 8). Operating from a single power supply of 2.7 V to 3.6 V and offering a fast access time of 55 ns in a wide variety of package options, the AS6C4008A is optimized for low-power industrial, telecom, medical, automotive, and networking applications and is particularly well-suited for battery backup nonvolatile memory.

Alliance Memory Inc., a worldwide provider of legacy memory ICs for the communications, computing, industrial, and consumer markets, today announced that the latest edition of its free product selection guide is now available. To help designers choose the right legacy memory product for their applications, the eight-page guide provides key specification for Alliance Memory's full range of asynchronous SRAMs and recently introduced synchronous DRA...

Alliance Memory, Inc., a worldwide provider of legacy memory ICs for the communications, computing, industrial, and consumer markets, today announced that William Chen has joined the company as its new sales representative in Taiwan. In his new position, Chen will be responsible for supporting Alliance Memory's distributors and promoting the company's SRAM and synchronous DRAM products in Taiwan and China, a territory that will expand to all of S...

Alliance Memory, Inc., a worldwide provider of legacy memory ICs for the communications, computing, industrial, and consumer markets, today introduced a full line of new, high-speed CMOS synchronous DRAMs (SDR) with densities of 64 Mb (AS4C4M16S), 128 Mb (AS4C8M16S), and 256 Mb (AS4C16M16S).