A new family of high-speed CMOS pseudo SRAMs (PSRAMs) with densities from eight to 128Mb in 6x7x1mm 48-ball FPBGA and 4x4x1mm 49-ball FPBGA packages, has been introduced by Alliance Memory. The devices combine the most desirable features of SRAMs and DRAMs to provide designers with easy-to-use, low-power, and cost-effective memory solutions for wireless, automotive, networking, and industrial applications.

For legacy and new designs Alliance Memory provides hard-to-find SRAMs, pseudo SRAMs, and DRAMs, including DDR, DDR1, DDR2 and DDR3, and low-power LPSDRAM products. Alliance Memory’s ICs provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions over a range of applications requiring high memory bandwidth.

Alliance Memory has announced that it has expanded its high speed CMOS DDR3 and low voltage DDR3L SDRAMs with new 512Mb 8 times and 16 times devices in the 78-ball and 96-ball FBGA packages, respectively. Featuring a DDR architecture, the SDRAMs provide fast transfer rates of 1,600Mbps and clock rates of 800MHz.

  To meet the demand for low power SRAMs with higher densities, Alliance Memory has introduced a new 64Mb (4Mx16 bit) device in 48‑pin, 12x20mm TSOP-I and 48-ball TFBGA packages. Available from a limited number of suppliers, the AS6C6416-55 operates from a single power supply of 2.7-3.6V and offers a fast access time of 55ns.

Alliance Memory is making it easier for its customers to find any DRAM memory chip in its extensive offering - including scarce allocated devices and uncommon packages and densities - with a new website that shows part inventories at worldwide distributors such as Avnet, Digi-Key, Future, and Mouser.

A new die revision (B die) for Alliance Memory's 2Gb and 4Gb devices in the 96-ball FBGA package has been announced, in order to address the memory market's shortage of high-speed CMOS DDR3 and low-voltage DDR3L SDRAMs. TJ Mueller, Vice President of Marketing at Alliance Memory, said: "Market demand for DDR3 and DDR3L SDRAMs is extremely high due to their increased functionality and speed, but their availability is becoming more an...

To meet the demand for high-density fast CMOS SRAMs, Alliance Memory has introduced new 8Mb and 16Mb x32 devices in the 90-ball 8x13mm TFBGA package. Providing space-saving alternatives to solutions in larger 119-ball packages, the devices are optimised for networking routers and switchers, test and medical equipment, and automotive applications. Featuring access times of 10ns and data retention voltages of 1.5V minimum, the 8Mb AS7C325632-1...

  Alliance Memory has introduced a 1Gb high-speed CMOS double data rate synchronous DRAM (DDR SDRAM) in the 66-pin TSOP II package. Offered in an industrial temperature range from -40°C to +85°C, the AS4C128M8D1-6TIN features a hard-to-find internal configuration of four banks of 32M word x 8 bits.

A new line of high-speed CMOS mobile low-power DDR2 (LPDDR2) SDRAMs has been introduced by Alliance Memory. They have densities of 1Gb, 2Gb, and 4Gb in the 134-ball FBGA package. The devices offer a variety of power-saving features, including 1.2/1.8V operating voltages, to extend battery life in portable electronics, while their high density enables slim designs. The LPDDR2 SDRAMs provide reliable drop-in, pin-to-pin compatible replace...

Alliance Memory has introduced two 512Mb synchronous DRAMs (SDRAM) in the 54-pin TSOP II package. The AS4C32M16SB-7TCN and AS4C32M16SB-7TIN are available in commercial (0 to +70°C) and industrial (-40 to +85°C) temperature ranges. The devices provide pin-for-pin replacements for Micron Technology's discontinued 32M x 16 MT48LC32M16A2P-75:C (AS4C32M16SM-7TCN) and MT48LC32M16A2P-75 IT:C (AS4C32M16SM-7TIN) SDRAMs.

Alliance Memory today introduced a new high-speed CMOS mobile low-power DDR3 (LPDDR3) SDRAM designed to extend battery life in compact portable devices. Featuring low voltage operation of 1.2V/1.8V and a number of power-saving features, the 16Gb AS4C512M32MD3 is offered in the 11.0mm by 11.5mm 178-ball FBGA package. With each new product generation, designers of mobile devices such as smartphones, tablets, and VR and AR headsets are tasked w...

Alliance Memory announced that the company has expanded its manufacturers' representative agreement with ISMOSYS, the principal trading division of the Spectrum Electronics Group. Having offered Alliance Memory's entire lineup of SRAMs and DRAMs in Italy since 2006, ISMOSYS is now the exclusive representative for the company's memory solutions to direct OEMs and distributor channels in Spain, Portugal, and Turkey.

It has been announced that Alliance Memory's Synchronous DRAM (SDRAM) portfolio now features a variety of components that provide an automotive temperature range of -40 to 105°C and are fabricated and assembled to automotive quality standards. Alliance Memory offers a complete lineup of high-speed CMOS SDRAMs, including Double Data Rate (DDR), DDR2, and DDR3 devices. 

Two high-speed CMOS mobile synchronous DRAMs (MSDR) have been introduced by Alliance Memory, designed to extend battery life in mobile devices. Featuring low power consumption of 1.8V and a number of power-saving features, the 51Mb AS4C32M16MS and AS4C16M32MS are offered in 8x9x54mm ball and 8x13x90mm ball FPBGA packages.

Alliance Memory has introduced a  monolithic high-speed, low-voltage CMOS double data rate 3 synchronous DRAM (DDR3L SDRAM) with an 8Gb density in the 78-ball, 9x13.2mm, lead (Pb)-free FBGA package. Delivering increased power efficiency for high-end computer and storage systems, the 1G x 8 AS4C1G8MD3L offers a double data rate architecture for extremely fast transfer rates of up to 1,600Mbps/pin and clock rates of 800MHz.

Alliance Memory has extended its offering of 256M high-speed CMOS synchronous DRAMs (SDRAM) with two x32 devices in the 86-pin, 400mm, plastic TSOP II package. Internally configured as four banks of 8M word x 32 bits, the high-density AS4C8M32S-6TIN and AS4C8M32S-7TCN provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in industrial, commercial, medical and networking products requiring high memory band...

Alliance Memory has announced that the company is selling Micron Semiconductor lead (Pb)-bearing double data rate (DDR), double data rate 2 (DDR2), and single data rate (SDR) devices that Micron discontinued with Micron PCN #31396 (last time buy: April 15, 2015; last time ship: Nov. 30, 2015).

Expanding its line of legacy low-power CMOS SRAMs, Alliance Memory has announced an 8M IC (512k x 16-bit) in the 48-pin 12x20mm TSOP-I package. Available from a very limited number of suppliers and recently discontinued by another manufacturer, the AS6C8016-55TIN operates from a single power supply of 2.7 to 3.6V and offers a fast access time of 55ns.

A monolithic high-speed, low-voltage CMOS DDR3L SDRAM with an 8Gb density in a 96-ball, 9x14mm, lead (Pb)-free FBGA package has been released by Alliance Memory. Featuring silicon provided by Micron Technology, the AS4C512M16D3L (512M x 16) offers a double data rate architecture for extremely fast transfer rates of up to 1600Mbps/pin and clock rates of 800MHz.

Alliance Memory has broadened its lineup of high-speed CMOS DDR2 SDRAMs with a device featuring high 2Gb density in the 84-ball 8x12.5x1.2mm FBGA package. Available from a very limited number of suppliers, the AS4C128M16D2 is offered in commercial (0 to +85°C) and industrial (-40 to +95°C) temperature ranges.