GaAs pHEMTprocess technology provides higher gain/bandwidth

27th March 2015

Qorvo

Siobhan O'Gorman

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A GaAs (Gallium Arsenide ) pHEMT (pseudomorphic high electron mobility transistor) process technology, which provides higher gain/bandwidth and lower power consumption than competing semiconductor processes, has been introduced by Qorvo. The TQPHT09 is a 90nm pHEMT process that supports the company’s next-gen optical product portfolio. This process is suitable for next-gen high frequency, high performance amplifiers required for 100G+ linear applications.

Manufactured in Qorvo's GaAs fabrication facility in Richardson, Texas, the TQPHT09 is the latest offering in the company's well-established pHEMT process portfolio. The technology serves as the basis for several optical modulator driver products including the TGA4960-SL, Qorvo’s quad-channel 100G modulator driver. The TGA4960-SL is available in the CFP2 form factor for metro and long haul applications, and is also well suited for upgrading the 100G linear dual-channel drivers for line card applications. The driver is optimised for high performance, low power dissipation and high channel-to-channel isolation, and is packaged in a 14.0x8.0x2.6mm SMT module, the smallest footprint in the industry.

James Klein, President, Infrastructure and Defense Products group, Qorvo, said, "Qorvo continues to invest and develop the most competitive semiconductor process technologies in the industry, enabling outstanding components for next-gen products. Qorvo's 90nm pHEMT process exemplifies our leadership in providing components for high-speed market applications with the quality, reliability and dependable source of supply our customers expect."