Analysis
ICSI-7 conference to be held in Leuven, Belgium, from Monday August 29 until Thursday September 1st 2011.
In addition, the Nagoya University, KULeuven and imec will organize the 2nd workshop “GeSn developments and future applications” as a satellite event on Friday September 2 in the same location.
ICSIGrowth, Characterization and Modeling of Si and Group IV (C, Si, Ge, Sn) based Thin Film Materials including research on various interfaces on Si; Formation and Characterization of Group IV based Nanostructures including quantum dots, nanowires and self-assembly processes; Process Technologies for Group IV based Heterostructures including doping, Source/drain and channel engineering as well as strained Si; Electronic Properties and Device Applications such as transistors and nano-structured devices; Optical Properties and Device Applications including solar cells of Si and Ge based heterostructures; Germanium based semiconductor... from materials to devices; Si(Ge)-based materials growth and device fabrication for spintronics such as spin polarized electron injection, transport, and manipulation, as well as other electron spin based phenomena; Growth, characterization and applications of epitaxial (high-k) dielectric materials; Emerging technologies: Hetero-Epitaxial film growths on SiGe and characterization (Graphene, III-V and others materials)
Keynote Address:
Matty Caymax (imec, Belgium)
Masanobu Miyao (Kyushu University, Japan) Jerry Tersoff (IBM, USA)
Invited Speakers:
Didier Dutartre (STMicroelectronics, France) Maksym Myronov (University of Warwick, UK) Michael Oehme (University of Stuttgart,Germany) H. Joerg Osten (Leibniz Universität Hannover, Germany) Ina Ostermay (at Ferdinand-Braun Institute, Leibniz-Institut für Höchstfrequenztechnik, Germany) Henry Radamson (Royal Institue of Technology, Sweden) Thomas Schroeder (IHP-Microelectronics, Germany) Geert Hellings (imec, Belgium) Paul R. Berger (Ohio State University, USA) Eugene Fitzgerald (Massachusetts Institute of Technology, USA) Matthias Bauer (ASM International, USA) Satheesh Kuppurao (AMAT, USA) Jifeng Liu (Massachusetts Institute of Technology, USA) Chee-Wee Liu (National Taiwan University, Taiwan) Chia Yee Yeo (National Univ. Singapore, Singapore) Toshihide Nabatame (National Institute for Materials Science, Japan) Takashi Nakayama (Chiba University, Japan) Satoshi Tanimoto (Nissan Motor, Japan)