Analysis

Semi-Polar GaN wafers for LED & LD device makers

10th June 2010
ES Admin
0
Technologies and Devices International, Inc. (TDI), part of the Oxford Instruments Group, and Ostendo Technologies are pleased to announce the availability of Semi-Polar (11-22) GaN layer on sapphire substrate wafers using Ostendo’s proprietary design and TDI’s proprietary Hydride Vapour Phase Epitaxy (HVPE) technology.
This joint development now provides the opportunity to leading High Brightness Light Emitting Diode (HBLED) and Laser Diode developers to increase optical efficiency significantly compared with structures grown on c-plane GaN substrates.

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