Analysis
Dow Corning Joins the imec GaN Affiliation Program
Dow Corning has formalized an agreement to enter the imec multi-partner industrial R&D program on GaN semiconductor materials and device technologies. The program focuses on the development of the next generation GaN power devices and LEDs. The collaboration between Dow Corning and imec will concentrate on bringing the GaN epi-technology on silicon wafers to a manufacturing scale.
Due As a leading producer of SiC wafers and epitaxy, Dow Corning is leveraging its capability in electronic materials technology and quality supply to bring next generation materials technology to global device manufacturers. We work closely with our customers to develop innovative solutions throughout the value chain. “By joining the imec GaN Affiliation Program, Dow Corning will rapidly expand its substrate product portfolio with high quality and affordable GaN epi-wafers for power, RF and LED markets” says Tom Zoes, Global Director, Dow Corning Compound Semiconductor Solutions.
Dow Corning is also the majority shareholder in the Hemlock Semiconductor Group joint ventures which is a leading provider of polycrystalline silicon and other silicon-based products used in the manufacturing of semiconductor devices and solar cells and modules.
“We are delighted to welcome Dow Corning as a partner in our GaN Affiliation Program. Teaming up with imec’s epitaxy and device researchers within our multi-partner environment creates a strong momentum to bring this technology to market,” says Rudi Cartuyvels, Vice President Process Technology at imec.