New Broadband Gain Blocks from Avago Technologies Deliver High Linearity and Low Current Consumption via InGaP HBT Technology

The AVT-55689 and AVT-54689 gain blocks leverage Indium Gallium Phosphate (InGaP) Hetero-junction Bipolar Transistor (HBT) process to achieve state-of-the-art reliability, temperature stability and performance consistency. The devices are each internally matched to 50 ohms, eliminating the need for additional radio frequency (RF) matching components. The cost-efficient devices’ broadband gain is also ideal for cellular infrastructure designs that require the same driver amplifier or gain block for different frequencies.

AVT-55689 and AVT-54689 Performance

At the typical operating condition of 5V and 83 mA, the AVT-55689 device delivers performance of 17.2 dB Gain, 33.0 dBm Output Third Order Intercept Point (OIP3), 19.4 dBm Output Power at 1 dB Gain Compression (P1dB) and 4.4 dB noise figure at 2000MHz.

At the typical operating condition of 5V and 60 mA, AVT-54689 delivers performance of 17.4 dB Gain, 30.0 dBm OIP3, 17.7 dBm P1dB and 4.0 dB noise figure at 2000 MHz.


Additional AVT-55689 and AVT-54689 Product Features

• Input and output fully matched to 50 ohms

• Built-in temperature compensated internal bias circuitry

• Excellent uniformity in product specifications to minimize yield impact

• RoHS-Compliant and MSL-1 rated package: lead and halogen free