Wireless Microsite
NXP Boosts RF Innovation with Next Generation SiGe:C BiCMOS QUBIC4 Technology
NXP has announced its next generation radio frequency technology with its highly advanced QUBIC4 BiCMOS silicon devices delivering higher levels of integration and performance at high frequencies, all in a cost effective way. NXP's commitment to furthering the development of QUBIC4 BiCMOS will now enable future generations of RF products such as low noise amplifiers, medium power amplifiers and LO generators for e.g. mobile phones and communications infrastructure equipment to operate at a higher performance level.
NXP The world has gone wireless, said Stan Bruederle, Research VP, Gartner. Both at home and on the move, consumers are continuously interacting with a growing number of mobile devices that deliver exciting new applications and entertainment possibilities. However, as ever more data gets pushed down to these devices, the boundaries of performance and frequency are pressed to the limit. The semiconductor industry is now enabling previously unachievable levels of RF integration and performance to ensure device manufacturers can capture emerging application markets and that consumers get an ever improved level of functionality.
NXP's QUBIC4 process is also available for ASIC service, combining RF and microwave design IP and application knowledge, state-of-the-art low cost RF packaging and in-house fabrication for volume production.
The RF market continues to be driven by consumer demands for greater levels of connectivity with mass-price cost structures, said John Croteau, VP Analog Mixed Signal, NXP Semiconductors. As a silicon-based technology with the performance of GaAs, QUBIC4 enables more robust, more integrated and more cost-effective solutions while ensuring excellence in signal quality. It perfectly demonstrates our commitment to delivering new, high-performance RF technologies that enable new classes of connected devices.