Transistor claims to offer highest peak power for radar

Delivering 650W of peak power with a typical 19.5 dB of gain and 60% efficiency, the device allows operation at 50V under more extreme load mismatch conditions thanks to its high breakdown voltages. Operating between the 1200 MHz – 1400 MHz frequency range, the robustness of the device is highlighted by its MTTF of 5.3*106 hours. Assembled in a high performance ceramic flange package, the device offers state of the art power with rugged performance which suits today’s demanding radar applications.

“The MAGX-001214-650L00 is a clear leader in high pulsed power GaN technology with guaranteed 650 W of peak output power combined with excellent gain, efficiency and reliable performance,” said Paul Beasly, Product Manager. “The device is an ideal candidate for customers looking to combine two power transistors and realize over 1,000 W of peak power in a single pallet for next generation L-Band radar systems that require increased performance in smaller footprints.”