Wireless
RFHA1003 30MHz TO 512MHz, 9W GaN Wideband Power Amplifier
RFMD’s RFHA1003 GaN Power IC (PIC) is a wideband power amplifier designed for continuous wave and pulsed applications such as military communications, electronic warfare, wireless infrastructure, radar, two-way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, this high-performance amplifier achieves high efficiency, flat gain and power over a large instantaneous bandwidth in a single amplifier design.
ThisFeatures
• Advanced GaN HEMT and Heat Sink Technology
• Input Internally Matched to 50Ω
• 28V Operation, Output Power of 9W
• 30MHz to 512MHz Instantaneous Bandwidth
• Gain: 19dB
• Power Added Efficiency: 70%
• Large-Signal Models Available
• EAR99 export control Applications
• Milcom, Public Mobile Radio
• Electronic Warfare
• Power Amplifier Stage for Commercial Wireless Infrastructure
• Civilian and Military Radar
• General Purpose Tx Amplification
For more information on RFHA1003, visit
https://estore.rfmd.com/RFMD_Onlinestore/Products/RFMD+Parts/PID-P_RFHA1003.aspx