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ON Semiconductor - Schottky Barrier Diodes for Portable Applications

20th August 2009
ES Admin
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ON Semiconductor has introduced four new 30V Schottky barrier diodes. Housed in an ultra-small 0201 Dual Silicon No-lead (DSN2) chip level package, the new Schottky barrier diodes offer portable electronics designers both the industry’s smallest Schottky diode and best-in-class space-performance.
These new Schottky diodes are available with low forward voltage or low reverse current at forward current ratings of either 100 milliamp (mA) or 200 mA - the latter being the industry’s smallest 200 mA rated parts. The new devices provide an ideal solution for the increasing number of applications where board space is restricted such as mobile handsets, MP3 players and digital cameras.

“By combining industry-leading performance in small, space-saving packages, ON Semiconductor has once again demonstrated both our technical capability and understanding of our customers’ needs,” said Dan Huettl, director and general manager of ON Semiconductor’s Small Signal and Transistor Group. “As the growth and evolution of the portable equipment market continues at a rapid pace, it is important that we – as a leading manufacturer of discrete components - keep pace to assist our customers in bringing exciting new products to market as quickly as possible.”

The Schottky diodes feature solderable metal contacts under the package that enable 100 percent utilization of the package area for active silicon. The new 0201 DSN-2 package – which measures a mere 0.6 mm x 0.3 mm x 0.3 mm - provides a three times the board space savings compared to the popular SOD-923 (also known as 0402) which measures 1.0 mm x 0.6 mm x 0.4 mm. Providing the lowest leakage currents on the market, the news devices help designers address power losses, efficiency and switching speeds. The new Schottky diodes have a significant performance per board area advantage versus competing parts housed in traditional plastic molded packages. Class-leading power management characteristics also serve to help to prolong battery life in portable equipment applications.

The NSR0xF30NXT5G series devices are optimized for low forward voltage drop (Vf), 370 millivolts (mV) at 10 mA, which further reinforces the advanced, high-performance specification of the series. The NSR0xL30NXT5G series devices are designed for low reverse current (Ir), 2.0 microamps (µA) at 10 V reverse voltage and offer very low leakage, extending battery life. With ESD ratings of Human Body Model: Class 3B and Machine Model: Class C coupled with low thermal resistance the two series help support design engineers challenged with incorporating ever-increasing amounts of circuitry into small spaces.

The Schottky diodes are RoHS compliant and have an operating temperature range of –40°C to +125°C, making them suitable for use in equipment that is used in harsh indoor and outdoor environments. The introduction of the new devices in the DSN2 housing underlines ON Semiconductor’s technical capabilities and the expansion of its product range into space-efficient chip level packages that meet the latest customer requirements.

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