Cambridge GaN devices announces latest Webinar

Florin UdrEa, Chief technology Officer CGD, says: "We are aware of the challenges the world is currently facing: an enormous increase in energy consumption leading to climate change and global warming. This is why CGD focuses on GaN, a Wide Bandgap (WBG) material which enables highest efficiency and high switching frequencies. But we also understand the challenges designers, engineers, our customers are facing when working with GaN: specifically easy-of-use and reliability. This webinar mainly addresses the first issue, but also makes key points concerning the second, both through the introduction of the new concept of ICeGaN. Finally, we will conclude with a look at what could be next for GaN."

During this series, CGD's GaN experts share their insights on GaN for efficient power conversion. 'Powering up The Future with GaN', Andrea Bricconi, Chief Commercial Officer, CGD introduced the basics of GaN, and positioned it in relation to traditional silicon solutions and silicon carbide (SiC), highlighting the potential benefits of the broad adoption of GaN.

ICeGaN 650 V GaN ICs are single-chip eMode HEMT devices that can be driven like a MOSFET, without the need for special gate drivers, complex and lossy driving circuits, negative voltage supply requirements or additional clamping components. Devices are extremely reliable and rugged, suitable for demanding applications environments.