Search results for "gallium nitride"
What is gallium nitride (GaN)? – the next step in semiconductors
In this article, Electronic Specifier will answer the question - what is gallium nitride (GaN)? Also exploring where its origins lie, and how it’s being utilised today.
Infineon pioneers world’s first 300mm power GaN wafer technology
Infineon has announced that the company has succeeded in developing the world’s first 300mm power GaN wafer technology.
Achieving high efficiency in telecom power supplies
This article focuses on the Analog Devices MAX15258, which is designed to accommodate up to two MOSFET drivers and four external MOSFETs in single-phase or dual-phase boost/ inverting-buck-boost configurations. It is possible to combine two devices for triple-phase or quad-phase operation, achieving higher output power and efficiency levels.
Top 5 power products in August
Electronic Specifier takes a look at the top 5 power products to have been released in August 2024.
Texas Instruments brings you the latest in Automotive
Here, you’ll find a selection of the latest news, products, and articles from Texas Instruments focused on the Automotive industry.
Achieving household energy efficiency and cost savings with GaN-based motor system designs
Charlie Munoz, Marketing Manager for the BLDC Motor Drivers at Texas Instruments, explores how GaN is enabling new gains in household energy efficiency and cost.
LMG2100R044 by Texas Instruments
The LMG2100R044 device is a 90V continuous, 100V pulsed, 35A half-bridge power stage, with integrated gate-driver and enhancement-mode Gallium Nitride (GaN) FETs. The device consists of two 100V GaN FETs driven by one high-frequency 90V GaN FET driver in a half-bridge configuration.
Wide bandgap semiconductors: GaN or SiC?
With wide bandgap semiconductors like Gallium Nitride (GaN) and Silicon Carbide (SiC) growing in popularity, it begs the question: GaN or SiC?
LMG3100R017 by Texas Instruments
The LMG3100 device is a 100V continuous, 120V pulsed, 126A Gallium Nitride (GaN) FET with integrated driver. The device consists of a 100V GaN FET driven by a high-frequency GaN FET driver.
Innoscience responds to latest Infineon lawsuits
Innoscience has firmly denounced the baseless accusations of patent infringement by Infineon Technologies AG.