Search results for "SiC MOSFET"
ROHM power modules adopted for electric vehicles
ROHM has announced that its power modules, featuring fourth-generation SiC MOSFET bare chips, have been adopted for the traction inverters in three models of ZEEKR electric vehicles from Zhejiang Geely Holding Group (Geely).
Mouser, onsemi partner for SiC eBook
Mouser Electronics has released a new eBook in collaboration with onsemi, exploring the use of silicon carbide (SiC) semiconductors for power system design.
Navitas announces new Gen-3 ‘Fast’ SiC in robust TOLL package
Navitas Semiconductor has extended its new portfolio of Gen-3 ‘Fast’ (G3F) 650 V SiC MOSFETs into a thermally-enhanced, rugged, high-speed, surface-mount TOLL (Transistor Outline Leadless) package designed for demanding, high-power, high-reliability applications.
Yole & SERMA compare different SiC MOSFETs
Yole and SERMA have teamed up to analyse the performance of five SiC MOSFETs from leading manufacturers and understand technology choices.
ROHM unveils new SiC products and vision for the future at PCIM 2024
At PCIM 2024, ROHM unveiled its new SiC product offerings as well as outlined its vision for the future. Leading the conversation was Dr. Kazuhide Ino, Managing Executive Officer & Head of Power Device Business at ROHM.
Toshiba sustainability focus at PCIM 2024
Toshiba will bring solutions that support customers’ goals in reducing their CO2 footprint at the PCIM 2024 conference and exhibition (Nuremberg 11th – 13th June).
Nexperia’s premier SiC MOSFETs now come in the increasingly popular D2PAK-7
Nexperia has announced its industry-leading 1200 V SiC MOSFETs in D2PAK-7 packaging, offering a choice of 30, 40, 60, and 80 mΩRDSon values. These devices are the latest addition to a series that will see Nexperia'sSiC MOSFET portfolio rapidly expand to include devices with RDSon values of 17, 30, 40, 60, and 80 mΩ in various flexible package options.
SemiQ to unveil half-bridge modules in S3 package at PCIM
SemiQ, a designer, developer, and global supplier of superior silicon carbide (SiC) solutions for efficient, high-performance, and high-voltage applications, will showcase its latest SiC power solutions and recently launched Known-Good-Die (KGD) screening process at PCIM Europe 2024 in Nuremberg from 11–13 June 2024.
Littelfuse unveils IX4352NE low-side gate driver
Littelfuse has announced the launch of the IX4352NE low-side SiC MOSFET and IGBT gate driver.
SemiQ launches KGD program
SemiQ, a provider of silicon carbide (SiC) solutions for high-performance and high-voltage applications, has launched a known-good-die (KGD) screening programme.