Search results for "SiC MOSFET"

Littelfuse, Inc. announced the SMFA Asymmetrical Series Surface-Mount TVS diode, the first-to-market asymmetrical TVS solution specifically designed to protectsilicon carbide(SiC) MOSFET gates from overvoltage events.

STMicroelectronics is introducing its fourth generation STPOWER silicon carbide (SiC) MOSFET technology.

Toshiba has developed new 1200V silicon carbide (SiC) MOSFETs with low on-resistance (RDS(ON)) and high levels of reliability.

STMicroelectronics’ STGAP3S family of gate drivers for silicon-carbide (SiC) and IGBT power switches combines ST’s latest robust galvanic isolation technology with optimised desaturation protection and flexible Miller-clamp architecture.

Allegro MicroSystems has announced a series of power products focused on performance and efficiency across automotive, industrial and data centre applications.

Sanan Semiconductor recently announced the expansion of its SiC power product portfolio with the introduction of 1700V and 2000V devices. These cutting-edge components are set to revolutionise power efficiency in applications ranging from renewable energy to electric vehicle charging infrastructure.

Infineon is introducing the HybridPACK Drive G2 Fusion, establishing a new power module standard for traction inverters in the e-mobility sector.

ROHM has announced that its power modules, featuring fourth-generation SiC MOSFET bare chips, have been adopted for the traction inverters in three models of ZEEKR electric vehicles from Zhejiang Geely Holding Group (Geely).

Mouser Electronics has released a new eBook in collaboration with onsemi, exploring the use of silicon carbide (SiC) semiconductors for power system design.

Navitas Semiconductor has extended its new portfolio of Gen-3 ‘Fast’ (G3F) 650 V SiC MOSFETs into a thermally-enhanced, rugged, high-speed, surface-mount TOLL (Transistor Outline Leadless) package designed for demanding, high-power, high-reliability applications.