Search results for "gallium nitride"

Toshiba America Electronic Components today announced the addition of a 200W C-Band gallium nitride semiconductor High Electron Mobility Transistor to its power amplifier product family. The new device will be shown during the conference exhibition portion of the 2013 IEEE MTT-S International Microwave Symposium from June 4-6 in Seattle, Washington.

Freescale Semiconductor introduce the latest additions to its flagship family of Airfast RF power solutions: three LDMOS power transistors and one gallium nitride transistor, all designed to exceed stringent land mobile market requirements for exceptional ruggedness. The new Airfast LDMOS power transistors deliver a compelling combination of stability, gain and ruggedness.

Fujitsu announce the development of a gallium-nitride HEMT-based transceiver module technology that features an output of 10 W and operates at frequencies up to the millimeter-wave band. Until now, developing high-output modules that operate in the millimeter-wave band has required modules consisting of separately packaged components to allow for sufficient heat dissipation. As a result, it has been difficult to produce compact modules.

Fujitsu Semiconductor Limited today announced the release of MB51T008A, a silicon substrate-based, gallium-nitride (GaN) power device that features a breakdown voltage of 150 V. Sample quantities of the new product will be made available starting July 2013. The new device, which enables normally-off operations, is capable of achieving roughly one half the figure of merit (FOM) of silicon-based power devices with an equivalent breakdown voltage. W...

AWR and Modelithics announce the availability of Version 10.1 of the Modelithics COMPLETE Library of passive and active device models for AWR’s Microwave Office high-frequency design software. The Modelithics COMPLETE Library offers the industry’s most advanced simulation models for passive components, transistors, diodes, and more, which are completely integrated within Microwave Office.

NuWaves Engineering will exhibit its high performance, miniaturized RF products and is also introducing and demonstrating the latest product entry to the NuPower product line of small, lightweight, and power-efficient RF power amplifier modules – an S- & C-band PA – at the 2013 International Microwave Symposium hosted by IEEE’s Microwave Theory and Techniques Society.

Northrop Grumman has developed new gallium arsenide Monolithic Microwave Integrated Circuit high-power amplifiers operating in the E-Band communication frequency spectrum. The APH667 and the APH668 are GaAs-based broadband, three-stage amplifier devices that operate from 81 – 86GHz and 71 – 76GHz respectively.

International Rectifier have today announced that it has qualified and shipped products built on its revolutionary Gallium Nitride-based power device technology platform for a home theatre system manufactured by a leading consumer electronics company. The pioneering GaN-based power device technology platform is the result of ten years of research and development by IR based on the company's proprietary GaN-on-silicon epitaxial technology.

GaN Systems announce that Rinehart Motion Systems has been appointed as an Accredited Systems Integration Partner. RMS has a track record of excellence in the design of traction inverters and power modules for transportation and other applications, with deep expertise in a wide range of areas from die packaging to systems architecture.

Toshiba Electronics Europe has announced two new Triac-output photocouplers that provide reinforced voltage and electrical noise insulation in an ultra-miniature SO6 double-mould package. The TLP265J and TLP266J have a minimum rated isolation voltage of 3750Vrms and have been designed for use in triac drivers, programmable controllers, AC output modules and solid-state relays used in home appliances and white goods.