Search results for "gallium nitride"

With shipments expected to increase rapidly over the coming years, semiconductor manufacturers are now competing against each other to offer the best solution for Bluetooth v4.0, as ES Design magazine Editor, Philip Ling discovers in this article.

GaN Systems Inc, a leading developer of gallium nitride power switching semiconductors, is presenting a paper on new wide-bandgap semiconductors and their role in transforming automotive power electronics at the Electric & Hybrid Vehicle Conference & Expo in Michigan 17 - 19 September. Manufacturers are currently designing vehicles to be launched onto the market in 2018, coinciding with the timeframe leading forecasters are predicting tha...

M/A-COM Technology Solutions introduce a new ceramic GaN on SiC HEMT Power Transistor for avionics applications. The MAGX-001090-600L00 is a gold-metalized, matched GaN on Silicon Carbide, RF power transistor optimized for pulsed avionics applications, such as secondary surveillance radar in air traffic control systems.

Picodeon has today announced the world’s first production equipment for the use of pulsed laser deposition in volume manufacturing. Developed in cooperation with PVD Products, the Picodeon ColdAb Series 4 thin film deposition system delivers industrial-scale PLD coating production of 4-inch wafer sizes, including the fully-automated delivery of substrates to the pre-clean chamber and to the main Coldab coating chamber.

GaN Systems is exhibiting at the 15th ECCE European Conference and Exhibition taking place in the historic city of Lille, France from 3 – 5 September. GaN Systems develops the most complete range of gallium nitride power switching solutions available and is focussed on the easy adoption of gallium nitride by design and systems engineers.

Peregrine Semiconductor has today announced the introduction a new carrier-grade Wi-Fi switch which features the highest performance on the market. With the highest isolation by a factor of 50, Peregrine’s new PE42423 switch also sets a new bar in linearity. This makes it ideally suited for the fast-growing market of 802.11ac Wi-Fi access points.

A new white paper from AWR, “RF/Microwave EDA Software Design Flow Considerations for PA MMIC Design,” examines a gallium arsenide pseudomorphic high electron mobility transistor power amplifier design approach from a systems perspective. The design flow and its essential features for most PA design projects is illustrated through the design of a simple, Class A GaAs pHEMT monolithic microwave integrated circuit PA using AWR’s M...

Cypress Semiconductor announce that LSI has selected Cypress’s parallel nonvolatile Static Random Access Memories for its new 12Gb/s SAS Host Bus Adapters for high-performance servers, workstations and external storage systems. The nvSRAMs provide the SAS HBAs with high-speed and low-voltage fail-safe memory that enhances LSI’s solutions. LSI also chose the parallel nvSRAM for its flexibility to operate at different voltages and for i...

Yole Développement announces its new market & technology patent investigation, LED Phosphors and Down-Converters. Hundreds of companies are involved in LED phosphor IP. Most of the major LED players are present in the list of the top patent assignees. But independent phosphor manufacturers are also emerging as major forces in the IP landscape… LED phosphor IP is shaping the industry.

GaN Systems has today announced that a team of its experts on gallium nitride technologies will present a major conference paper at the 224th ECS Electrochemical Energy Summit (San Francisco, California October 27 – November 1). Authored by Tom MacElwee, John Roberts, Hughes Lafontaine, I. Scott, Greg Klowak, and Lyubov Yushyna, the “Characterisations and performance of D-Mode GaN HEMT transistor used in a cascode configuration”...