Search results for "gallium nitride"

Thanks to a new process, a CMOS RF power amplifier has matched the performance of GaAs devices for the first time, resulting in new possibilities for reconfigurable RF front ends, reports Sally Ward-Foxton.

Signalling the company's entry into the monolithic microwave integrated circuit (MMIC) market space, Microsemi has introduced 16 products spanning DC-40GHz. The portfolio consists of wideband amplifiers, low noise amplifiers and switches which have been designed for use in the defense, communications, instrumentation and aerospace industries.

In the future it will be possible to use IGBT High Power Modules (IHM) from Infineon Technologies AG even longer. More robust construction and greatly improved thermal conductivity behaviour increase the average life time in comparison to previous models by a factor of up to 11 under the same conditions of use. A major advantage here is that the electrical and mechanical parameters of the module remain the same in spite of the necessary changes i...

Peregrine Semiconductor announces the availability of UltraCMOS PE45140 and PE45450 RF power limiters. Peregrine’s power limiters represent the industry’s first turnkey, monolithic solutions to provide an alternative to discrete, PIN-diode limiters based on gallium arsenide (GaAs). Now shipping, these components offer repeatable and reliable protection designed for test-and-measurement, land-mobile-radio (LMR), wireless-infrastructure...

Infineon Technologies has shipped more than one billion RF switches used in smartphones and tablet products. It is expected that the demand for RF switches will show double-digit growth over the next years mainly driven by the increased number of LTE bands integrated in the next generation of smartphones and tablets.

Housed in a full-brick format, the AGF800DC/DC module has been launched byArtesyn Embedded Technologies. The 800W module, the highest power output DC/DC module offered by the company, delivers more than 94.5%typical efficiency and a wide input range of 36 to 75V.

Scientists at the University of Liverpool have created a new material, related to graphene, which has the potential to improve transistors used in electronic devices. The material, ‘triazine-based graphitic carbon nitride’, or TGCN, was predicted theoretically in 1996, but this is the first time that it has been made.

In the last century, silicon semiconductor-based power electronics - which control or convert electrical energy into usable power - transformed the computing, communication,electric vehicleand energy industries and gave consumers and businesses more powerful laptops, cell phones and motors. Over the coming decade, that era will begin to come to an end. The full picture, from inverters to battery management systems, is given in the IDTechEx report...

M/A-COM Technology Solutions announces an IP licensing program for Gallium Nitride (GaN) on Silicon technology. The company has recently highlighted two areas critical to achieving the goal of enabling the mainstream adoption of GaN as a large-scale RF semiconductor technology across the industry.

The power rating of the PTN series of resistors, from Vishay Intertechnology, has been extended to 2W. Available inthe 2512 case size, theprecision surface-mount, thin film chip resistors have been built using the Vishay Dale Thin Film, a self-passivated, moisture-resistant tantalum nitride resistive film technology. This technology combines high power rating with a low absolute TCR of ± 25 ppm/°C and laser-trimmed tolerances down to &...