Search results for "gallium nitride"
Patents for GaN power conversion are granted
Patents in the area of GaN (Gallium Nitride) power conversion, directed towards the operation and use of GaN transistors, have been secured byTransphorm. Patent applicationnumber 8,816,751 entitled "Ip" was granted by the United States Patent and Trademark Office (USPTO)on 26th August, 2014, while13/887,204 entitled "Bridge Circuits and Their Components" was grantedon 27th August 2014.
Does Vertical Flash NAND memory offer scalability?
3D Vertical NAND (V-NAND) flash memory is breaking through the current scaling limit for existing NAND flash technology. Achieving gains in performance and area ratio, the new 3D V-NAND is developed for a wide range of consumer electronics and enterprise applications, including embedded NAND storage and solid state drives (SSDs).
A look at the latest developments in non-volatile memory
The rate at which modern devices generate data means it should come as no surprise that manufacturers are still actively developing alternative and - hopefully - improved non-volatile memory solutions. Philip Ling, Editor, ES Design magazine, takes a look at some of the most recent developments.
CVD materials enable 300+ mm diameter component manufacture
A range of materials grown using CVD (chemical vapour deposition) processes has been introduced by Morgan Advanced Materials. Morgan's CVD SiC (Silicon Carbide) and PBN (Pyrolytic Boron Nitride) are suitable for use insemiconductor applications such as rapid thermal processing and plasma etch process chamber components.The materials are also suited for use in metalorganic CVD tools for high-brightness white LED manufacturing, using the indium gal...
Thin film chip resistors reduce thermal resistance
Offering power ratings of 2 and 6W in compact 1206 and 2512 case sizes, the PCAN series of high-power, surface-mount precision thin film chip resistors has been announced by Vishay Intertechnology. The aluminium nitride substrates of the resistors have enlarged backside terminations in order to reduce the thermal resistance between the topside resistor layer and the solder joint on the end user's circuit assembly.
Changing the rules for LEDs
GaN and Silicon really shouldn’t go together but several companies are making it work in order to reap the cost benefits, as Sally Ward-Foxton reports.
Infineon Technologies to Create Pilot Space for Industry 4.0
Infineon Technologies AG is expanding its Austrian site in Villach. Core emphasis is the on the expansion of expertise for the manufacturing of the future as well as research and development (R&D). “Pilot Space Industry 4.0” will realize and put to the test an innovative concept for networked and knowledge-intensive production.
Kyzen demo cleaning solutions at SEMICON Taiwan
Scheduled from 3rd to 5th September 2014 in Taipei City, Taiwan, Kyzen will exhibit in booth 1226 at SEMICON Taiwan. The company will demonstrate the MICRONOX MX2302 wafer-level cleaning solution and the AQUANOX A4638 advanced packaging cleaning chemistry.
German researchers cut energy losses in half
New semiconductor materials could mean 50% less energy loss in switched-mode power supplies for PCs, flat-screen televisions, servers and telecommunications systems and could make solar inverters even more compact and cost-efficient. The partner companies of the research project “NeuLand” have developed highly-integrated components and electronic circuits which made it possible to reduce energy loss in circuits by 35% as early as duri...
Filler achieves a 20% increase in polymer thermal performance
A filler claimed to increase polymer thermal performance while reducing production costs, has been introduced by Carbodeon. By using0.03wt.% nanodiamond material at45% thermal filler loading the companycan achieve a 20% increase in polymer thermal performance.Last October, Carbodeon published its data on thermal fillers showing that the conductivity of polyamide 66 (PA66) based thermal compound could be increased by 25% by replacing 0.1wt.% of th...