Search results for "gallium nitride"

Suitable for use in semiconductor applications, CVD SiC and PBN materials have been introduced by Morgan Advanced Materials. The applications in which the materials are suitable for includerapid thermal processing and plasma etch process chamber components. The materials can also be used asmetalorganic CVD tools for high-brightness white LED manufacturing using the indium gallium nitride process.

Vishay Intertechnology's PTN series of precision surface-mount thin film chip resistors has been enhanced, now featuring a lower absolute TCR of ±10ppm/°C andtighter tolerances to ±0.05%. Protected by a self-passivated, moisture-resistant tantalum nitride (TaN) resistive film, the devices offer high power ratings to 2W over a wide temperature range of -55 to +155°C.

Claimed to include the world's first automotive chassis MCUs that utilise a 40nm process, the RH850/P1x series of 32-bit MCUs utilise the Renesas-exclusive metal oxide nitride oxide silicon (MONOS) structure. This reduces power consumption and improves functional safety system development efficiency for electrical power steering, brake and other chassis systems.

Optimism is fast returning to the entire photovoltaic industry despite some still having approximately 20% over-capacity. The sales are up and the estimates for shipments in 2014 range from 41 to 49 GW, up from 30 GW in 2012. This is welcome news as the industry experienced several difficult years characterised by over-capacity and reduced demand, triggering an intense wave of consolidation globally. The IDTechEx Printed Electronics and Energy Ha...

Suitablefor rapid thermal processing and plasma etch process chamber components, Chemical Vapour Deposition (CVD) SiC and Pyrolytic Boron Nitride (PBN) materials have been introduced byMorgan Advanced Materials. The materials are also suitable as metalorganic CVD tools for high-brightness white LED manufacturing using the indium gallium nitride process.

Thefirst RF SOI (Silicon On Insulator) switches to deliver an alternative to incumbent gallium arsenide (GaAs) technology have been released byPeregrine Semiconductor. ThePE42542 and PE42543 areUltraCMOS,18GHz, broadband RF switches. Due the switches'UltraCMOS technology, they have features whichGaAs technology does not.

Toshiba Electronics Europe has expanded its LETERAS family of white LEDs, introducing the TL1L3 series. The 1.0W LEDs combine cost-effective gallium nitride-on-silicon (GaN-on-Si) chips with an industrial standard 3535 lens type package with a footprint of 3.5x3.5mm and a height, including lens, of just 2.42mm.

Silicon Carbide (SiC) propagates over all industrial segments, announces Yole Développement. Power factor corrector (PFC), photovoltaic inverter, motor control … and more represented a $100 million business in 2013.

Infineon has acquired International Rectifier for $3bn. The acquisition creates a behemoth in power management technology. Infineon expands its product portfolio, gets access to International Rectifier’s acclaimed Gallium Nitride on Silicon (GaN) process for power semiconductors, gains a higher profile in the US as well as a larger regional footprint particularly in Asia/Pacific.

At EPE ’14 ECCE Europe, 26th to 28thAugust in Finland, GaN Systems will present its latest devices, including a series of normally-off 100V GaN transistors and a low inductance, thermally-efficient 650V transistor family. The power semiconductors target applications such as onboard battery charging, high-voltage DC/DC and AC/DC conversion, UPS, air-conditioning, home appliances, heavy-duty battery-operated power tools and E-bikes.