Search results for "gallium nitride"

A GaAs(Gallium Arsenide) pHEMT (pseudomorphic high electron mobility transistor) process technology, which provides higher gain/bandwidth and lower power consumption than competing semiconductor processes, has been introduced by Qorvo. The TQPHT09 is a 90nm pHEMT process that supports the company’s next-gen optical product portfolio. This process is suitable for next-gen high frequency, high performance amplifiers required for 100G+ linear ...

Graphene has the potential to influence many areas of technology, not least of all the future of solar cell design. By Dr Craig P. Dawson, 2-DTech.

The popular term 'drones' gives a military connotation to the long-awaited, futuristic innovation that is Unmanned Aerial Vehicles (UAVs). According to IDTechEx, most of today's market value lies in military applications, both for electric and - the big money - non-electric versions. Nonetheless, small UAVs are increasing in sales fastest, primarily due to non-military applications.

The next step for PV technology is integrating it directly into buildings. Sally Ward-Foxton explores for ES Design magazine.

Transphorm Japan and Fujitsu Semiconductor have announced that Fujitsu’s CMOS-compatible, 150mm wafer fab in Aizu-Wakamatsu, Fukushima, has started mass production of Gallium Nitride (GaN) power devices for switching applications. The large-scale, automotive-qualified facility will expand Transphorm’s GaN power device business, aiming to satisfy the increasing market demands for GaN devices, thereby enabling next-gen compact, energy-e...

GaN Systems is stepping up its sales effort in Europe. It has signed a distribution agreement with Ecomal Europe to promote and distribute its gallium nitride (GaN) high power switching transistors. The partnership is seen as synergistic by both GaN Systems and Ecomal Europe, as many of GaN Systems’ prospective customers in the region already have a relationship with Ecomal Europe.

According to Lux Research, GaN-on-Si wafer substrates will dominate the Gallium nitride (GaN) market for at least the next decade, growing to $1bn in 2024, a 90% share. GaN materials can create more efficient devices for electric power conversion in devices from cell phone chargers to HEVs, leading to a $1.1bn market for GaN discrete components in 2024.

Richardson RFPD has availability and full design support capabilities for a new 1.2kV, 13mΩ all-silicon carbide half-bridge module from Cree. The CAS120M12BM2 includes C2M MOSFETs and Z-Rec diodes and features ultra-low loss, high-frequency operation, zero reverse recovery current from the diodes, zero turn-off tail current from the MOSFETs, fail-safe operation, ease of paralleling, and a copper baseplate and aluminum nitride insulator.

Researchers around the world are working to develop optical chips where light can be controlled with nanostructures. These could be used for future circuits based on the behaviour of photons instead of electrons - that is, photonics instead of electronics. But it has proved to be impossible to achieve perfect photonic nanostructures: by nature they are inevitably imperfect.

Infineon has announced that it has closed the acquisition of International Rectifier, which has become part of Infineon following the approval of all necessary regulatory authorities and IR’s shareholders.