Search results for "gallium nitride"
Navitas celebrates its ten-year milestone
Navitas marks 10 years of innovation and growth in a broad range of fast-growing markets from ultra-fast mobile charging to AI data centres, renewable energy and EVs.
Infineon drives decarbonisation and digitalisation at APEC 2024
Infineon has detailed its plans to highlight a broad range of power electronic devices during APEC 2024, 25–29 February.
Infineon’s GaN Systems receives 'Graduate Of The Year' Award
Infineon’s GaN Systems has been recognised as the “Graduate Of The Year” by The Global Cleantech 100.
Infineon and Anker open joint Innovation Application Centre
Infineon has announced its joint Innovation Application Centre in Shenzhen with Anker Innovations.
TI highlight energy infrastructure in its sustainability-focused electronica 2024
Texas Instruments (TI) has been busy at electronica 2024 showing off its latest innovations to enable what it calls a more ‘intelligence and sustainable future.’
RF power amplifier operates between 7.9 and 11 GHz
Richardson RFPD has announced in-stock availability and full design support capabilities for a new gallium nitride on silicon carbide, radio frequency power amplifier from United Monolithic Semiconductors.
Semiconductor manufacturer SweGaN boosts leadership
SweGaN AB, a European semiconductor manufacturer that develops and produces custom-made Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers, announces the introduction of CFO Stefan Axelsson, and R&D Manager Anders Lundskog.
Infineon and OMRON partner for V2X solutions
Infineon has announced its partnership with OMRON, combining Infineon’s GaN-based power solutions with circuit topology and control technology of OMRON.
US announces first CHIPS grant goes to BAE Systems
The US Department of Commerce has allocated $35 million in initial funding to BAE Systems for the modernisation of their Microelectronics Centre (MEC) in Nashua, New Hampshire.
Diamond-enhanced GaN transistors in heat management
In an exciting advancement in semiconductor technology, researchers at Osaka Metropolitan University have integrated gallium nitride (GaN) transistors with diamond substrates, addressing the increasing heat management challenges in miniaturised semiconductor devices.