Search results for "MOSFET"

Navitas Semiconductor has announced its new portfolio of Gen-3 ‘Fast’ (G3F) 650 V and 1,200 V SiC MOSFETs optimised for the fastest switching speed, highest efficiency, and increased power density for applications such as AI data centre power supplies, on-board chargers (OBCs), fast EV roadside super-chargers, and solar / energy-storage systems (ESS).

At PCIM 2024, Microchip announced its On-Board Charger (OBC) solution that uses a selection of its automotive-qualified digital, analog, connectivity and power devices, including the dsPIC33C Digital Signal Controller (DSC), the MCP14C1 isolated SiC gate driver and mSiC MOSFETs in an industry-standard D2PAK-7L XL package.

New families of silicon carbide (SiC) MOSFETs and Schottky Barrier Diodes (SBDs) in TSPAK packaging are being premiered by WeEn Semiconductors at PCIM Europe in Nuremberg (June 11-13).

At PCIM 2024, ROHM unveiled its new SiC product offerings as well as outlined its vision for the future. Leading the conversation was Dr. Kazuhide Ino, Managing Executive Officer & Head of Power Device Business at ROHM.

Cambridge GaN Devices (CGD) has launched its lowest ever on-resistance (RDS(on)) parts.

Texas Instruments (TI) has introduced the industry’s first 650V three-phase GaN IPM (Integrated Power Module) for 250W motor drive applications on the opening day of the PCIM exhibition in Nuremberg (June 11-13).

Littelfuse, Inc. announces the launch of CPC3981Z, an 800V, 100 mA, 45 Ohm, Small Power N-Channel Depletion Mode MOSFET.

Infineon introduced the 600V CoolMOS S7TA Superjunction MOSFET for automotive power management applications.

Alpha and Omega Semiconductor Limited (AOS) announce the expansion of its package portfolio options for the second generation 650 to 1200V αSiC MOSFETs.

PWM is a fundamental technique in both analog and digital systems due to its ability to efficiently control power, generate precise signals, and manage various system parameters with high accuracy.