Search results for "gallium nitride"

Three new science-grade thermal cameras, the A6200sc NIR, A8300sc HD MWIR, and A6700sc LWIR** have been unveiled by FLIR Systems. Designed for demanding science and research, the applications include electronics development, university research, and non-destructive testing. The cooled cameras deliver exceptional image quality, standardised interfaces and MATLAB integration making them powerful, efficient tools for gathering thermal data.

A 650 W gallium nitride (GaN) on silicon carbide (SiC) HEMT pulsed power transistor for L-band pulsed avionics applications has been introduced by MACOM. This transistor is available in standard flange or earless flange packaging. The MAGX-000912-650L00/MAGX-000912-650L0S is a gold metallised, internally matched, GaN on SiC depletion mode RF power transistor.

Infineon Technologies has announced the expansion of its Gallium Nitride (GaN)-on-Silicon technology and product portfolio. The company now offers both enhancement mode and cascode configuration GaN-based platforms optimised for high performance applications requiring superior levels of energy efficiency including Switch Mode Power Supplies (SMPS) used in servers and telecomms, and consumer goods such as Class D Audio systems. GaN technology sign...

GaN Systems has added a topside cooling technology to its wide range of high-power enhancement-mode devices. Topside cooling enables engineers to use conventional, well-understood PCB cooling techniques when incorporating GaN Systems’ semiconductors into designs for products such as inverters, UPS, EVs, HEVs, high voltage DC-DC conversion and consumer products such as TVs.

GaN Systems is participating in what promises to be a lively debate on one of the hottest topics at APEC 2015. Wide Bandgap Semiconductor devices in Power Electronics – Who, What, Where, When and Why?will be hosted and led by Kevin Parmeter, Vice President of Applications, Excelsys, and will see panellists from device manufacturers joining power electronics design engineers to air their views.

ON Semiconductorand Transphorm have announced theNTP8G202N(TPH3202PS) andNTP8G206N (TPH3206PS) 600V GaN cascode transistors and a 240W reference design that utilises them.With typical RDS(ON)values of 150 and 290mΩ, the products are offered in a TO-220 package for easy integration with existing PCB manufacturing capabilities.Both products have been qualified to JEDEC standards and are in mass production.

FLIR Systems has launched three new science-grade thermal cameras, the A6200sc NIR, A8300sc HD MWIR, and A6700sc LWIR. Designed for demanding science and research applications including electronics development, university research, and non-destructive testing, these new cooled cameras deliver exceptional image quality, standardised interfaces and MATLAB integration making them powerful, efficient tools for gathering thermal data.

Microtronic will display a range of products in Booth 7-101L at SMT Hybrid Packaging, scheduled to take place 5th to 7th May, 2015 at the Messe in Nuremberg, Germany. At the booth AIM will highlight specialty soldering materials in alloys of indium, tin, lead, bismuth, cadmium, gold and gallium for a wide range of joining applications.

Infineon Technologies and Panasonic have announced an agreement under which both companies will jointly develop Gallium nitride (GaN) devices based on Panasonic’s normally-off (enhancement mode) GaN on silicon transistor structure integrated into Infineon’s SMD packages. In this context Panasonic has provided Infineon with a license of its normally-off GaN transistor structure.

In a broad assessment of the status and prospects of solar photovoltaic technology, MIT researchers say that it is ‘one of the few renewable resources with both the scalability and the technological maturity to meet growing global demand for energy.’Use of solar photovoltaics has been growing at a phenomenal rate: worldwide installed capacity has seen sustained growth averaging 43% per year since 2000.