Search results for "gallium nitride"

The developer of gallium nitride power switching semiconductors,GaN Systems, has announced a $20m venture capital financing. Cycle Capital Management led the round and was joined by BDC Capital and Tsing Capital, as well as existing investors Chrysalix Energy Venture Capital and RockPort Capital.

The MAGX-000912-650L0x is a gold-metalised, matched gallium nitride on silicon carbide RF power transistor from MACOM, that is optimised for civilian and military pulsed avionics amplifier applications in the 960 MHz to 1215 MHz range, such as Mode-S, TCAS, JTIDS, DME and TACAN.

It is possible to use mix and match power components to create customised units that are adaptable to a range of energy sources and load requirements while optimising the power sub-system for size, weight, and power, agues Chester Firek, Vicor.

GaN Systems has announced the appointment of Stephen Coates as Vice President of Operations. The recent post is part of GaN Systems’ planned increase in headcount at all levels as the company ramps up production of its market-leading gallium nitride devices based on its unique Island Technology design to supply global demand from design engineers.

4th gen GaN on Si (Gallium Nitride on Silicon) technology, which delivers greater than 70% peak efficiency and 19dB gain for modulated signals at 2.7GHz, has been introduced by M/A-COM Technology Solutions (MACOM). This is similar to GaN on SiC technologies and more than 10% greater efficiency than LDMOS.

A comprehensive review of the LED downconverters market and competitive landscape has been proposed in Yole Développement’s (Yole) recent LED downconverters technology and market report, titled Phosphors & Quantum Dots 2015: LED Downconverters for Lighting & Displays. The report presents the requirements for lighting and displays, configurations and dispensing methods, and trends in phosphor compositions.

A range of Gallium Nitride (GaN) on Silicon (Si) epi-wafers that meet industrial specifications for HEMT devices at 650V will be demonstrated by EpiGaN at PCIM Europe.The company will be situated at booth 6-432.

AEC-Q200-qualified, high-precision, dual-in-line, thin film resistor networks from Vishay Intertechnology have low TCR tracking of ± 5ppm/°C.The AORN series also have tight ratio tolerances to ± 0.05% and long-term ratio stability of 0.015 % after 1,000 hours at +155°C. For improved ESD and moisture protection, the resistor networks are constructed with a tantalum nitride resistor film on a high-purity alumina or ceramic sub...

Heterointerfaces composed of dissimilar materials have been applied to functional devices such as transistors and LEDs. In particular, the best-quality electron system is formed in gallium arsenide heterostructures, where a unique quantum phase was found at low temperature about 30 years ago,the characteristics of which have yet to be clarified.

Ewan Ramsay, Principal Engineer, Raytheon UK, explains why SiC (Silicon Carbide) holds the key to high power semiconductor technology and how it can help push electronics further into harsh environments.